Defect properties of ZnO nanowires revealed from an optically detected magnetic resonance study

摘要

Optically detected magnetic resonance (ODMR) complemented by photoluminescence measurements is used to evaluate optical and defect properties of ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition. By monitoring visible emissions, several grown-in defects are revealed and attributed to Zn vacancies, shallow (but not effective mass) donor and exchange-coupled pairs of Zn vacancies and Zn interstitials. It is also found that the intensity of the donor-related ODMR signals is substantially lower in the NWs compared with that in bulk ZnO. This may indicate that formation of native donors is suppressed in NWs, which is beneficial for achieving p-type conductivity.