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Nano- and microstructuring of graphene using UV-NIL

机译:使用UV-NIL的石墨烯纳米和微结构

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摘要

In this work we demonstrate for the first time the micro-and nanostructuring of graphene by means of UV-nanoimprint lithography. Exfoliated graphene on SiO_ 2 substrates, as well as graphene deposited by chemical vapor deposition (CVD) on polycrystalline nickel and copper, and transferred CVD graphene on dielectric substrates, were used to demonstrate that our technique is suitable for large-area patterning (2×2cm~ 2) of graphene on various types of substrates. The demonstrated fabrication procedure of micrometer as well as nanometer-sized graphene structures with feature sizes down to 20nm by a wafer-scale process opens up an avenue for the low-cost and high-throughput manufacturing of graphene-based optical and electronic applications. The processed graphene films show electron mobilities of up to 4.6×10~ 3cm~ 2V~ 1s~ 1, which confirms them to exhibit state-of-the-art electronic quality with respect to the current literature.
机译:在这项工作中,我们首次展示了通过UV-纳米压印光刻技术进行的石墨烯的微观和纳米结构。 SiO_2衬底上的脱落石墨烯以及通过化学气相沉积(CVD)沉积在多晶镍和铜上的石墨烯,以及在介电衬底上转移的CVD石墨烯,证明了我们的技术适用于大面积构图(2× 2cm〜2)的石墨烯在各种类型的基材上。晶圆级工艺演示的微米级以及特征尺寸低至20nm的纳米级石墨烯结构的制造程序,为基于石墨烯的光学和电子应用的低成本,高通量制造开辟了道路。经过处理的石墨烯薄膜显示出高达4.6×10〜3cm〜2V〜1s〜1的电子迁移率,这证实了它们相对于当前文献而言表现出最先进的电子质量。

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