Implementation of atomically defined field ion microscopy tips in scanning probe microscopy

摘要

The field ion microscope (FIM) can be used to characterize the atomic configuration of the apices of sharp tips. These tips are well suited for scanning probe microscope (SPM) use since they predetermine the SPM resolution and the electronic structure for spectroscopy. A protocol is proposed for preserving the atomic structure of the tip apex from etching due to gas impurities during the period of transfer from the FIM to the SPM, and estimations are made regarding the time limitations of such an experiment due to contamination with ultra-high vacuum rest gases. While avoiding any current setpoint overshoot to preserve the tip integrity, we present results from approaches of atomically defined tungsten tips to the tunneling regime with Au(111), HOPG (highly oriented pyrolytic graphite) and Si(111) surfaces at room temperature. We conclude from these experiments that adatom mobility and physisorbed gas on the sample surface limit the choice of surfaces for which the tip integrity is preserved in tunneling experiments at room temperature. The atomic structure of FIM tip apices is unchanged only after tunneling to the highly reactive Si(111) surface.