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首页> 外文期刊>Nanotechnology >Conductance histogram evolution of an EC-MCBJ fabricated Au atomic point contact
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Conductance histogram evolution of an EC-MCBJ fabricated Au atomic point contact

机译:EC-MCBJ制备的Au原子点接触的电导直方图演变

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摘要

This work presents a study of Au conductance quantization based on a combined electrochemical deposition and mechanically controllable break junction (MCBJ) method. We describe the microfabrication process and discuss improved features of our microchip structure compared to the previous one. The improved structure prolongs the available life of the microchip and also increases the success rate of the MCBJ experiment. Stepwise changes in the current were observed at the last stage of atomic point contact breakdown and conductance histograms were constructed. The evolution of 1G_0 peak height in conductance histograms was used to investigate the probability of formation of an atomic point contact. It has been shown that the success rate in forming an atomic point contact can be improved by decreasing the stretching speed and the degree that the two electrodes are brought into contact. The repeated breakdown and formation over thousands of cycles led to a distinctive increase of 1G _0 peak height in the conductance histograms, and this increased probability of forming a single atomic point contact is discussed.
机译:这项工作提出了一种基于电化学沉积和机械可控断裂结(MCBJ)方法相结合的金电导量化的研究。我们描述了微制造过程,并讨论了与前一个相比,我们的微芯片结构的改进功能。改进的结构可以延长微芯片的使用寿命,并且还可以提高MCBJ实验的成功率。在原子点接触击穿的最后阶段观察到电流的逐步变化,并构建了电导直方图。电导直方图中1G_0峰高的演变用于研究形成原子点接触的可能性。已经表明,通过降低拉伸速度和两个电极的接触程度,可以提高形成原子点接触的成功率。在数千个循环中反复击穿和形成导致电导直方图中1G _0峰高的明显增加,并讨论了形成单个原子点接触的这种增加的可能性。

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