Triple-band oscillator with two shunt fourth-order LC resonators

摘要

This letter presents a triple-band (TB) oscillator using two 4(th) order LC resonator to form a 6(th) order resonator. The TB cross-coupled oscillator two pairs of back-to-back varactors for band switching and it has been implemented with CMOS devices in the TSMC 0.18m SiGe 3P6M BiCMOS technology. The core power consumption of the high (middle, low)-band core oscillator are 2.25(2.33, 2.58) mA and 1.8(1.86, 2.06) mW, respectively at the dc drain-source bias of 0.8V. The oscillator can generate differential signals in the frequency range of 8.44-8.71GHz, 6.74-6.86GHz, and 4.22-4.47 GHz. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:580-583, 2016