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Modeling stepped U-slot DGS microstrip line

机译:建模U型槽DGS微带线

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This paper presents an equivalent circuit model for a stepped U-slot defected ground structure (DGS). For a stepped U-slot DGS, the defected structure is simply modeled using a short-circuited stepped impedance coplanar waveguide (CPW) combined with a gap capacitor. The proposed circuit model is advantageous in its ability to accurately control the ratio (=f(s1)/f(r)) of the fundamental resonance frequency (f(r)) to first spurious resonance frequency (f(s1)) by changing the impedance and the electrical length of the CPW in each step. By using this property, two types of resonators with normalized first spurious resonance frequencies (=f(s1)/f(r)) of 4 and 2 were designed and fabricated. Good agreement between the EM simulations and the experimental results were achieved. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:583-587, 2016
机译:本文提出了一种阶梯式U型槽缺陷接地结构(DGS)的等效电路模型。对于阶梯式U槽DGS,使用短路的阶梯式阻抗共面波导(CPW)与间隙电容器相结合,可以简单地对缺陷结构进行建模。所提出的电路模型的优势在于,它可以通过改变来精确控制基本谐振频率(f(r))与第一寄生谐振频率(f(s1))之比(= f(s1)/ f(r))。每个步骤中CPW的阻抗和电气长度。通过利用该特性,设计并制造了两种类型的谐振器,它们的归一化第一寄生谐振频率(= f(s1)/ f(r))为4和2。 EM仿真和实验结果之间取得了很好的一致性。 (c)2015年,Wiley Periodicals,Inc.微波技术通讯,2016年58:583-587

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