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首页> 外文期刊>International Journal of Quantum Chemistry >Application of DFT for the modeling of the valence region photoelectron spectra of boron and d-element complexes and macromolecules
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Application of DFT for the modeling of the valence region photoelectron spectra of boron and d-element complexes and macromolecules

机译:DFT在硼和d元素配合物及大分子价域光电子能谱建模中的应用

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Using density functional theory (DFT) in conjunction with ultraviolet (UPS) and X-ray photoelectron spectroscopy (XPS), we investigated a number of complexes and macromolecules. We have shown on a large set of UPS, XPS, and DFT data that the calculated Kohn-Sham energies of organic and metalorganic complexes can be used as approximate ionization energies (IEs). It is possible to evaluate IEs with an accuracy of 0.1 eV with the density functional approximation (DFA) defect approach. This method has been successfully tested on a large number of boron -diketonates and d-metal chelate and sandwich complexes. We interpreted the bands in the valence region of the XP spectra of macromolecular organosilicon compounds in the solid state by taking into account the density of states and the ionization cross-sections. According to DFT calculation results, the one-electron states in the valence region of the model compounds correlate with the positions of the spectral band maxima. (c) 2015 Wiley Periodicals, Inc.
机译:使用密度泛函理论(DFT)结合紫外线(UPS)和X射线光电子能谱(XPS),我们研究了许多配合物和大分子。我们已经在大量的UPS,XPS和DFT数据上表明,计算出的有机和金属有机配合物的Kohn-Sham能量可以用作近似电离能(IEs)。使用密度泛函近似(DFA)缺陷方法可以评估精度为0.1 eV的IE。该方法已在大量的二酮硼酸硼和d-金属螯合物及三明治复合物中成功测试。我们通过考虑状态密度和电离截面来解释固态大分子有机硅化合物XP光谱价域中的能带。根据DFT计算结果,模型化合物的价态区域中的单电子态与光谱带最大值的位置相关。 (c)2015年威利期刊有限公司

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