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Microscopic theory for insulator to metal transition in cuprates

机译:铜酸盐中绝缘子向金属过渡的微观理论

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摘要

"Hubbard U" is equal to the energy of the insulator to metal transition in Mott insulators. Hubbard U is, therefore, also the excitation energy for metal atom to other metal atom transitions and the key concept in photoinduced conductivity spectra of pure and doped cuprates. In this article, the electronic structure of Cu(II) and Cu(III) sites is first discussed. It is shown that Hubbard U depends on the location of the excitation in the CuO _2 plane relative to the Cu(III) sites. Far from the Cu(III) sites, the ground-state wave function continues to be of spin-coupled type. Near to a Cu(III) site, it changes character and is mixed with charge components. The Hubbard gap thus depends on locality in the CuO _2 plane. Close to a Cu(III) site, it tends to zero and induces local conductivity. Far from a Cu(III) site, it is large but converges to zero as the doping levels are raised. In fact, the Hubbard gap has many features in common with the pseudogap.
机译:“ Hubbard U”等于Mott绝缘子中绝缘子到金属过渡的能量。因此,Hubbard U也是金属原子向其他金属原子跃迁的激发能,也是纯铜和掺杂铜酸盐的光导电导率光谱中的关键概念。在本文中,首先讨论了Cu(II)和Cu(III)位的电子结构。结果表明,Hubbard U取决于激发在CuO _2平面中相对于Cu(III)的位置。远离Cu(III)位置的基态波函数仍然是自旋耦合类型。在Cu(III)部位附近,它会改变特征并与电荷成分混合。因此,哈伯德间隙取决于CuO _2平面中的局部性。靠近Cu(III)部位,它趋于零并引起局部电导率。远离Cu(III)位置,它很大,但是随着掺杂水平的提高,收敛到零。实际上,哈伯德间隙具有与伪间隙相同的许多特征。

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