Laser field dependence of intersubband transition in inverse V-shaped quantum wells

摘要

The electron energy levels and the envelope wave functions in inverse GaAs/AlGaAs V-shaped quantum wells (QWs) are calculated using the transfer matrix method. The influence of applied electric and laser fields on the electronic distribution is investigated. In studied systems, a laser-induced attenuation for anomalous electric polarization of the excited state is found. Also, an oscillator strength increasing under high-frequency laser radiation is obtained. The results presented in this article can be useful for novel device applications based on the intersubband transitions of electrons.