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A theoretical study of the electronic structure of GaN nanorods

机译:GaN纳米棒的电子结构的理论研究

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We present a theoretical study of the evolution of the electronic structure of wurtzite GaN nanorods for different lengths (2.4-15.4 nm) in the [0001] direction and different diameters (0.97-2.25 nm). This study includes both a hybrid density functional theory study and a comparison with the k.p empirical band structure method. From the quantum chemical calculations, surface effects are found to be important. When these have been compensated for the electronic structure properties as a function of rod length or diameter approximately follow the trend expected from the quantum confinement effect. The k.p method predicts a similar behavior although deviations are apparent for smaller sizes.
机译:我们提出了纤锌矿型GaN纳米棒在[0001]方向上的不同长度(2.4-15.4 nm)和不同直径(0.97-2.25 nm)的电子结构演变的理论研究。该研究既包括混合密度泛函理论研究,也包括与k.p经验带结构方法的比较。通过量子化学计算,发现表面效应很重要。当这些已经被补偿时,作为棒长度或直径的函数的电子结构性质大约遵循量子限制效应所预期的趋势。尽管较小的尺寸会出现明显的偏差,但k.p方法预测的行为类似。

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