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Proximity-effect correction for 3D single-photon optical lithography

机译:3D单光子光刻的接近效应校正

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摘要

A proximity-effect-correction (PEC) algorithm for three-dimensional (3D) single-photon gray-scale photolithography is proposed and numerically analyzed in this paper. The gray-scale dose assigned to every point within the photoresist volume is optimized to guarantee that the fabricated 3D patterns are as close to the designed patterns as possible. PEC optimizations for 3D woodpile geometries using low and high absorption photoresist are simulated. Spatial resolution of the proposed PEC algorithm is numerically studied. We also investigated the efficacy of our algorithm on a variety of related 3D geometries. (C) 2015 Optical Society of America
机译:提出了一种三维(3D)单光子灰度光刻的邻近效应校正算法,并对其进行了数值分析。优化分配给光致抗蚀剂体积内每个点的灰度剂量,以确保制造的3D图案尽可能接近设计的图案。模拟了使用低吸收和高吸收光刻胶的3D木桩几何形状的PEC优化。数值研究了提出的PEC算法的空间分辨率。我们还研究了我们的算法在各种相关3D几何形状上的功效。 (C)2015年美国眼镜学会

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