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Simulation and experimental study of aspect ratio limitation in Fresnel zone plates for hard-x-ray optics

机译:硬X射线光学器件的菲涅耳波带片中纵横比限制的模拟和实验研究

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摘要

For acquiring high-contrast and high-brightness images in hard-x-ray optics, Fresnel zone plates with high aspect ratios (zone height/zone width) have been constantly pursued. However, knowledge of aspect ratio limits remains limited. This work explores the achievable aspect ratio limit in polymethyl methacrylate (PMMA) by electronbeam lithography (EBL) under 100 keV, and investigates the lithographic factors for this limitation. Both Monte Carlo simulation and EBL on thick PMMA are applied to investigate the profile evolution with exposure doses over 100 nm wide dense zones. A high-resolution scanning electron microscope at low acceleration mode for charging free is applied to characterize the resultant zone profiles. It was discovered for what we believe is the first time that the primary electron-beam spreading in PMMA and the proximity effect due to extra exposure from neighboring areas could be the major causes of limiting the aspect ratio. Using the optimized lithography condition, a 100 nm zone plate with aspect ratio of 15/1 was fabricated and its focusing property was characterized at the Shanghai Synchrotron Radiation Facility. The aspect ratio limit found in this work should be extremely useful for guiding further technical development in nanofabrication of high-quality Fresnel zone plates. (C) 2015 Optical Society of America
机译:为了在硬X射线光学器件中获取高对比度和高亮度图像,一直在追求具有高纵横比(区域高度/区域宽度)的菲涅耳波带片。但是,纵横比限制的知识仍然有限。这项工作探索了在100 keV下通过电子束光刻(EBL)实现的聚甲基丙烯酸甲酯(PMMA)的宽高比极限,并研究了该极限的光刻因素。蒙特卡罗模拟和厚PMMA上的EBL均用于研究在100 nm宽致密区上的曝光剂量下的轮廓演变。在低加速模式下的高分辨率扫描电子显微镜用于免费充电,以表征所得的区域轮廓。我们认为这是首次发现,PMMA中的一次电子束扩散以及由于邻近区域的额外暴露而引起的邻近效应可能是限制纵横比的主要原因。利用优化的光刻条件,制备了长宽比为15/1的100 nm波带片,并在上海同步辐射装置上表征了其聚焦性能。在这项工作中发现的长宽比限制对于指导高质量菲涅耳波带片的纳米制造的进一步技术发展应该是非常有用的。 (C)2015年美国眼镜学会

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