Optical and interfacial layer properties of SiO_2 films deposited on different substrates

摘要

SiO_2 films were deposited on fused silica, silicon, glass, germanium, and sapphire substrates by an ion beam sputtering technique. The optical properties of SiO_2 films on different substrates and interfacial layer properties between SiO_2 films and different substrates were researched by the spectroscopic ellipsometry technique. The refractive indices of SiO_2 films deposited on different substrates are about 1.477 at the wavelength of 632.8 nm. The optical anisotropy property of SiO_2 films on fused silica substrate is the best. The impact of thermal treatment on surface roughness and interfacial layer properties between SiO_2 films and Si substrates were also investigated. When the annealing temperature is 550℃, the least surface thickness and thinnest interface layer thickness between SiO_2 films and silicon substrate can be achieved. The results indicate that the surface and interface layer properties between SiO_2 films and silicon substrate can be greatly improved when the optimum annealing temperature is selected.