Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

摘要

Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H_(2), because the hydrogen acts a shallow donor. The average transmittance was over 85percent in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 X 10~(-4) (OMEGA-cm) and 4.39 X 10~(-4) (OMEGA-cm), respectively.