In situ reflectance and optical constants of ion-beam-sputtered SiC films in the 58.4 to 149.2 nm region

摘要

The reflectance of freshly deposited SiC thin films is measured in situ for what we believe is the first time. SiC was deposited by means of ion-beam sputtering. Reflectance was measured as a function of the incidence angle in the far and extreme ultraviolet wavelengths from 58.4 to 149.2 nm. In situ measurements allowed obtaining the intrinsic reflectance of SiC films, which is somewhat larger than what had been measured for samples exposed to the atmosphere. Reflectance measurements were used to determine the optical constants of the material in the same spectral range. We compare our data to those of the literature corresponding to SiC films deposited by different techniques and exposed to the atmosphere. In situ determined optical constants will allow a more accurate design of multilayers containing ion-beam-sputtered SiC layers.