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首页> 外文期刊>Angewandte Chemie >Highly Efficient Near-Infrared Organic Light-Emitting Diode Based on a Butterfly-Shaped Donor-Acceptor Chromophore with Strong Solid-State Fluorescence and a Large Proportion of Radiative Excitons
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Highly Efficient Near-Infrared Organic Light-Emitting Diode Based on a Butterfly-Shaped Donor-Acceptor Chromophore with Strong Solid-State Fluorescence and a Large Proportion of Radiative Excitons

机译:基于具有强固态荧光和大比例辐射激子的蝶形供体-发色团的高效近红外有机发光二极管

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摘要

The development of near-infrared (NIR) organic light-emitting diodes (OLEDs) is of growing interest. Donor-acceptor (D-A) chromophores have served as an important class of NIR materials for NIR OLED applications. However, the external quantum efficiencies (EQEs) of NIR OLEDs based on conventional D-A chromophores are typically below 1 %. Reported herein is a butterfly-shaped D-A compound, PTZ-BZP. A PTZ-BZP film displayed strong NIR fluorescence with an emission peak at 700 nm, and the corresponding quantum efficiency reached 16 %. Remarkably, the EQE of the NIR OLED based on PTZ-BZP was 1.54%, and a low efficiency roll-off was observed, as well as a high radiative exciton ratio of 48 %, which breaks through the limit of 25 % in conventional fluorescent OLEDs. Experimental and theoretical investigations were carried out to understand the excited-state properties of PTZ-BZP.
机译:近红外(NIR)有机发光二极管(OLED)的开发引起了越来越多的兴趣。供体-受体(D-A)生色团已成为NIR OLED应用中一类重要的NIR材料。但是,基于常规D-A发色团的NIR OLED的外部量子效率(EQE)通常低于1%。本文报道的是蝶形D-A化合物PTZ-BZP。 PTZ-BZP薄膜显示出很强的NIR荧光,并在700 nm处具有发射峰,相应的量子效率达到16%。值得注意的是,基于PTZ-BZP的NIR OLED的EQE为1.54%,观察到低效率的滚降以及48%的高辐射激子比,突破了传统荧光灯中25%的极限OLED。进行了实验和理论研究,以了解PTZ-BZP的激发态性质。

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