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首页> 外文期刊>Angewandte Chemie >Geometry-Mediated Enhancement of Single-Ion Anisotropy: A Route to Single-Molecule Magnets with a High Blocking Temperature
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Geometry-Mediated Enhancement of Single-Ion Anisotropy: A Route to Single-Molecule Magnets with a High Blocking Temperature

机译:几何介导的单离子各向异性增强:一条具有高阻断温度的单分子磁体的途径

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摘要

Gaising the blocking temperature (T_b) of magnetization reversal in single-molecule magnets (SMMs) is a formidable challenge that has to be addressed for their eventual practical application. A SMM displaying characteristic freezing of magnetization along a preferred direction in the absence of external magnetic field at above approximately 14 K has been elusive so far. Tremendous efforts are being devoted to rationalize the parameters governing the energy barrier of magnetization reversal (U) in SMMs. The thermal energy barrier of magnetization reversal between ground ± Ms levels is related to the axial zero-field splitting D and ground-state spin S through the expression U = S~2 |D| (or U=(S~2-I/4) | D | for non-integer spins; Figure 1).
机译:在单分子磁体(SMM)中提高磁化反转的阻断温度(T_b)是一项艰巨的挑战,必须针对其最终的实际应用加以解决。迄今为止,在没有外部磁场的情况下,在大约14 K以上的情况下,沿优选方向磁化冻结的SMM仍然难以捉摸。人们正在做出巨大的努力来合理化控制SMM中磁化反转(U)的能垒的参数。地面±Ms级之间的磁化反转的热能垒通过表达式U = S〜2 | D |与轴向零场分裂D和基态自旋S有关。 (对于非整数自旋,则为U =(S〜2-I / 4)| D |;图1)。

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