Corrosion Behavior of Sintered Silicon Carbide in Water Vapor at 300 deg C

摘要

The corrosion behavior of sintered silicon carbide (SiC) was examined in saturated water vapor at 300 deg C and the results were compared with those in 300 deg C water environment. Significant intergranular corrosion occured in the water vapor. The weight loss of the samples exposed to the water vapor was larger than that in the water. In the water vapor environment, scales, such as amorphous SiO_2, did nor form on the surface. This fact suggestes that volatile species, such as Si(OH)_4 were produced. The flexural strength of the samples exposed to both the environments for 10 days reduced to about 80 percent of the initial strength.