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Corrosion Behavior of Sintered Silicon Carbide in Water Vapor at 300 deg C

机译:烧结碳化硅在300℃水蒸气中的腐蚀行为

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摘要

We compared the corrosion behavior of sintered silicon carbide (SiC) in saturated water vapor at 300 deg C and in a 300 deg C water environment. Significant intergranular corrosion occurred in the water vapor. The samples exposed to it lost more weight than the samples in the water. No surface scale, such as amorphous SiO_2, formed in the water vapor, a fact suggesting that volatile species, such as Si(OH)_4, were produced. After exposure for 10 days, the samples in both environments lost about 80 percent of their initial flexural strength.
机译:我们比较了烧结碳化硅(SiC)在300摄氏度和300摄氏度水环境中的饱和水蒸气中的腐蚀行为。水蒸气中发生了明显的晶间腐蚀。暴露于水中的样品比水中的样品损失更多的重量。没有在水蒸气中形成表面垢,例如无定形SiO_2,这表明产生了挥发性物质,例如Si(OH)_4。暴露10天后,两种环境中的样品损失了其初始抗弯强度的80%。

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