Simulation analysis of capacitor discharge surge for transistors

摘要

For bipolar transistors used for motor driver application, a device with high surge withstand, particularly high capacitor discharge surge withstand is required. As a surge destruction mode, thermal destruction due to local temperature rise is conceived. Prior to the development of the device, the analysis of transient heat of capacitor discharge surge mode is conducted by using 2-dimension device simulation to analyze exothermic mechanism. Mask pattern and diffusion mechanism are investigated by simulation and as a result of fabrication of a prototype, a device with high destruction withstand is successfully developed.