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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates
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Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

机译:用于聚合物基板上低温溅射铟锡氧化物薄膜电阻率分析的表面形态建模

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摘要

Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig–Penney model, the semiconductor electrical theory and the modified Neugebauer–Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.
机译:通过在低基板温度下进行磁控溅射在聚甲基丙烯酸甲酯和聚对苯二甲酸乙二醇酯基板上制备了非晶或弱结晶的铟锡氧化物(ITO)薄膜样品。通过原子力显微镜(AFM)和标准的四点探针测量来测量ITO层的表面形态和电学性质。研究了表面形态对ITO薄膜电阻率的影响,发现其与结晶膜存在一些不同的变化。然后,提出了一种简化的薄膜系统模型,包括衬底,连续的ITO层和ITO表面晶粒,以处理这些相关性。基于该薄膜模型和AFM图像,引入了二次电势来模拟ITO表面形态的特征,并使用经典的Kronig-Penney模型,半导体电学理论和改进的Neugebauer-Webb模型来阐述详细的实验结果。建模方程与电阻率对表面形态特征的实验变化高度吻合。

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