STRUCTURAL STABILIZATION INDUCED BY OXYGEN PLASMA POST-EXPOSURE OF SIO2 FILMS DEPOSITED FROM TETRAETHOXYSILANE

摘要

Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600 degrees C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy. [References: 19]