Non-Hysteretic Behavior of Super Steep Ferroelectric Negative Capacitance Tunnel Field Effect Transistor Based on Body Profile Engineering

摘要

In this paper we have investigated a novel device structure for non-hysteretic ferroelectric negative capacitance Tunnel FET (NC-TFET) based on the body profile engineering. The proposed device exhibits super steep sub-threshold slope (SS) due to the cumulative effect of quantum mechanical band-to-band tunneling and gate bias boosting because of the polarization in the ferroelectric material. It leads to the negative capacitance (NC) effect in the device. It has magnificently reduced hysteretic losses due to thin semiconductor on conductor (i.e., T_(SOC)) body profile. This body profile tailors the device capacitance to achieve non-hysteretic behavior. The design of the proposed non-hysteretic NC-TFET is investigated and compared with conventional TFET having identical device dimensions and bias conditions using 2-D TCAD simulations. Owing to enhanced tunneling probability due to intrinsic bias boosting, it exhibits super steep sub-threshold slope (SS) as it is significantly reduced by 37% compared to conventional TFET at room temperature. Further, it also demonstrates significant amplification of drive current and transconductance (g_m) (10× even at 0.5 V_(DD)). Results reveal its potential for next generation high speed low power applications.