Tinnitus Detector Realization Using Sinh-Domain Circuits

摘要

A novel realization of a tinnitus detection system using the concept of filtering in the Sinh-Domain is introduced in this paper. Owing to the inherent class-AB nature of the Sinh-Domain filters, the proposed system is capable for handling currents which are greater than the bias current and, therefore, it offers educed power dissipation. In addition, the employment of MOS transistors operated in the weak inversion region offers the capability for ultra-low voltage operation. The behaviour of the system has been evaluated through the utilization of the Analog Design Environment of the Cadence software and MOS transistor models provided by the AMS C35 0.35 μm process.