Effect of Self Heating on Selective Buried Oxide and Silicon on Insulator Based Junctionless Transistors

摘要

A comparative analysis of thermal and electrical characteristics of silicon on insulator junctionless transistor (SOI-JLT) is compared with the proposed selective buried oxide junctionless transistor (SELBOX-JLT). The proposed structure gives the combined advantages of bulk junctionless transistor and the silicon on insulator junctionless transistor (SOI-JLT). The proposed device shows better thermal efficiency with a maximum device temperature of 315 K much less than that of SOI-JLT (470 K). The device has almost no effect of lattice heating on output characteristics. SELBOX-JLT of 10 nm channel length also exhibits better I_(OFF) of 8.39 × 10~(-15) A/μm, I_(ON)/I_(OFF) ratio of 2.43 × 10~(10), subthreshold slope (SS) of 84 mV/decade and drain induced barrier lowering (DIBL) of 93 mV/V as compared to I_(OFF) of 8.52 × 10~(-12) A/μm, I_(ON)/I_(OFF) ratio of 5.25 × 10~7, SS of 92 mV/decade and DIBL of 134 mV/V for SOI-JLT of the same channel length.