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首页> 外文期刊>Journal of Low Power Electronics >A New Simple P-MOS Charge Pump for Low Voltage Operations
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A New Simple P-MOS Charge Pump for Low Voltage Operations

机译:用于低压操作的新型简单P-MOS电荷泵

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In this paper a new charge pump is presented. It is based on PMOS pass-transistors with active control of the gate and body voltage. By controlling the gate and the body voltage of the P-MOS pass transistors the voltage drop due to the device threshold is removed; the gate of the pass transistors is driven by a bootstrapping 2 phase clock signal. The charge is pumped from one stage to the other with no threshold voltage drop, and higher output voltage than the conventional charge pumps can be obtained retaining a simple architecture. Computer simulations are provided along with comparison with other charge pump architectures.
机译:本文提出了一种新型的电荷泵。它基于具有栅极和体电压主动控制功能的PMOS传输晶体管。通过控制P-MOS传输晶体管的栅极和体电压,可以消除由于器件阈值引起的电压降;传输晶体管的栅极由自举2相时钟信号驱动。电荷从一个级泵送到另一级而没有阈值电压降,并且在保持简单结构的情况下可以获得比常规电荷泵更高的输出电压。提供了计算机仿真,并与其他电荷泵架构进行了比较。

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