Robust Double Gate FinFET Based Sense Amplifier Design Using Independent Gate Control

摘要

In this paper, we propose a new sense amplifier that is tolerant to the process variations and also immune to the radiations. We exploit the independent gate design to make the sense amplifier tolerant to the process variations. The benefits of DICE (dual interlock cell) are utilized to make the sense amplifier immune to the radiations. HSPICE simulation results for sensing delay, dynamic power dissipation, leakage power, noise voltage and radiation hardness are reported in this paper. Statistical simulations are carried out using Monte Carlo analysis. The proposed design show excellent immunity to the noise voltage, radiations, process variation and achieve good performance over the previously reported sense amplifiers.