A Simplified Mathematical Toolbox for Thermal Runaway Analysis

摘要

In this paper, we propose a simplified mathematical approach to the thermal runaway phenomena induced by leakage in a CMOS IC. We provide the full set of equations needed to determine if a system is stable or not, as well as the significant temperature points at which the phenomena occurs. This mathematical tool box can be used to sort IC parts against thermal runaway, even when the measurements are done at room temperature.