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首页> 外文期刊>Journal of Low Power Electronics >A Low-Power and Highly Linear Merged Low Noise Amplifier-Mixer for Wireless Sensor Network Applications
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A Low-Power and Highly Linear Merged Low Noise Amplifier-Mixer for Wireless Sensor Network Applications

机译:用于无线传感器网络应用的低功耗,高线性度合并式低噪声放大器-混频器

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In the literature, a number of merged low noise amplifier and mixer (LNAM) have been reported for Zigbee based low-power wireless sensor network (WSN). However, they suffer from the requirement of larger silicon area and degradation in the linearity due to second-order effects. In this paper, a number of techniques are proposed for overcoming these limitations and to increase the gain and reduce the noise figure. In this paper, the low noise amplifier (LNA) with capacitive feedback and π-matching input, capacitive cross-coupling (CCC) at cascode nodes, MOSFETs operating in moderate inversion-region (MIR), cross coupled RC-feedback between the outputs of differential cascode LNA and the cascode nodes in opposite arm (LNA-CFB) is proposed and it is merged with folded double balanced mixer (LNAM-CFB) using complementary current-reuse technique. The proposed LNAM-CFB achieves higher linearity, higher gain and lower silicon area. For the purpose of comparison, the proposed LNAM-CFB is designed in UMC 0.18-μm MMRF CMOS process with the supply voltage of 0.8-V and studied through post-layout simulation at 2.4 GHz frequency. From this study, it is found that the conversion gain (CG) of LNAM-CFB is higher by 3.02 dB, noise figure (NF) of LNAM-CFB is lower by 0.08 dB, and linearity (IIP3) of LNAM-CFB is higher by 15.6 dBm compared to those reported in the literature. The proposed LNAM-CFB has better input reflection coefficient (S11) of -44.62 dB and output reflection coefficient (S22) of -12.23 dB at 2.44 GHz, lower power dissipation of 733 μW and lower silicon area of approximately 41.66%.
机译:在文献中,已经针对基于Zigbee的低功率无线传感器网络(WSN)报道了许多合并的低噪声放大器和混频器(LNAM)。然而,它们遭受更大的硅面积和由于二阶效应而导致的线性度降低的需求。在本文中,提出了许多技术来克服这些限制并增加增益并降低噪声系数。本文中的低噪声放大器(LNA)具有电容反馈和π匹配输入,共源共栅节点处的电容交叉耦合(CCC),在中等反转区域(MIR)工作的MOSFET,输出之间的交叉耦合RC反馈提出了差分共源共栅LNA和对立臂共源共栅节点(LNA-CFB)的方案,并使用互补电流重用技术将其与折叠式双平衡混频器(LNAM-CFB)合并。提出的LNAM-CFB可实现更高的线性度,更高的增益和更低的硅面积。为了进行比较,本文提出的LNAM-CFB是在UMC0.18-μmMMRF CMOS工艺中设计的,电源电压为0.8V,并通过在2.4 GHz频率下进行布局后仿真研究。从这项研究中发现,LNAM-CFB的转换增益(CG)高3.02 dB,LNAM-CFB的噪声系数(NF)低0.08 dB,LNAM-CFB的线性度(IIP3)更高与文献中报道的那些相比,功率降低了15.6 dBm。所提出的LNAM-CFB在2.44 GHz时具有-44.62 dB的更好的输入反射系数(S11)和-12.23 dB的输出反射系数(S22),功耗更低,为733μW,硅面积约为41.66%。

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