Design of a Gate Driver for a Class-D Audio Output Stage with Break-Before-Make in 130 nm SOI-BCD Technology

摘要

In this work, design of a gate driver for class-D audio output stage with break-before-make (BBM) is proposed for high power efficiency and low distortion. The proposed gate driver is optimized in terms of current consumption (average and peak), and avoids any stress of the devices. This circuit has the following features: Adjustable slope of the voltages at output power pins and Overdrive options of the LDMOS gate-source voltage, to optimize the output power. The proposed gate driver was designed, simulated and layouted in Cadence using TSMC 130 nm SOI technology. The class-D audio amplifier achieves a total harmonic distortion plus noise (THD+N) at the 8-Ω load less than 0.06%, and a power efficiency of 95%. The final design occupies approximately 1.5 mm~2.