Design of Peripheral Circuits for the Implementation of Memory Array Using Data-Aware (DA) SRAM Cell in 65 nm CMOS Technology for Low Power Consumption

摘要

This paper presents the design of the peripheral circuits required to implement a memory array using data-aware (DA) SRAM cell. We used global signal generator circuits to reduce the area overhead. The global generator circuits are connected to their local counterparts through NMOS pass transistors. The column based approach is adopted in which write signal is routed parallel to bitline BL because write signal has to track BL. The adopted design approach in this thesis reduces the number of transistors as well as power consumption in the array. A feedback circuit has been proposed to maintain the data on the unselected cells of the selected row/column in the array due to toggle of the write signal during write operation. The proposed row/column circuitry saves more than 76% power and decodes the address 1.45× faster than the conventional decoder. Compared to other memory architecture, the proposed architecture saves approximately 74% power at a given power supply and temperature.