机译:Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT
机译:Getting ready for beyond-5G, super-IoT and 6G at hardware passive components level: a multi-state RF-MEMS monolithic step attenuator analyzed up to 60 GHz
机译:Physics based non-linear large-signal analysis of multiple-graphene layer exotic pin (p(++)-n(-)-n-n(++)) devices and ultra-fast SPST/SPDT/SPMT switches on Si/3C-SiC (100) substrates for application in THz-communication
机译:Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application
机译:Structural dynamic responses of layer-by-layer viscoelastic sandwich nanocomposites subjected to time-varying symmetric thermal shock loadings based on nonlocal thermo-viscoelasticity theory