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International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)

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1.Laser Annealing Technology and Device Integration Challenges

机译：激光退火技术和设备集成挑战
- 作者：Akio Shima
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
2.Fundamentals and Applications of Selenium-Passivated Si(100) Surface

机译：硒钝化Si（100）表面的基本原理和应用
- 作者：M. Tao
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
3.Ultimate Top-down Etching Processes for Future Nanoscale Devices

机译：最终纳米工艺的自顶向下的蚀刻工艺
- 作者：Seiji Samukawa;Kazuhiko Endo
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
4.Experimental Study on the O_2 Influences on Semiconductor Gas Sensor Responses

机译：O_2对半导体气体传感器响应影响的实验研究
- 作者：Guang-Fen Wei;Zhen-An Tang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
5.Design and optimization of micro-cantilever-based and magnetic bead-based immunosensor for application of the biological molecules testing

机译：基于微悬臂梁和磁珠的免疫传感器在生物分子检测中的设计与优化
- 作者：Peng Gao;Suying Yao;Ermao Li;Song Xie
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
6.Achieving ultra low k dielectric constant for nanoelectronics interconnect systems

机译：为纳米电子互连系统实现超低k介电常数
- 作者：Stefan E. Schulz;Knut Schulze
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
7.A Novel MOSFET Pressure Microsensor

机译：新型MOSFET压力微传感器
- 作者：Yan-Hong Zhang;Li-Tian Liu;Zhao-Hua Zhang;Zhi-Min Tan;Hui-Wang Lin;Tian-Ling Ren
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
8.Nonlinear model of open-loop mode capacitive micro-accelerometer

机译：开环模式电容式微加速度计的非线性模型
- 作者：Qiang Dai;Xiufen Shi;Chun Han;Mohua Yang
- 会议名称：《》 | 2006年
9.Electromagnetic Interference Induced during the switching of A Capacitive RF MEMS Switch

机译：电容式RF MEMS开关的切换过程中引起的电磁干扰
- 作者：Xiao-Lin Yuan;Qing-An Huang;Xiao-Ping Liao
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
10.Electrical Properties Study of Ni (Pt)-silicide/Si Contacts

机译：Ni（Pt）-silicide / Si Contacts的电性能研究
- 作者：Yifei Huang;Yu-Long Jiang;Guo-Ping Ru;Fang Lu;Qijia Cai;Shihai Cao;Bing-Zong Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
11.The PDSOI Accumulation-Mode Dynamic Threshold pMOS with Reversed Schottky Barrier

机译：具有反向肖特基势垒的PDSOI累积模式动态阈值pMOS
- 作者：Jin-Shun Bi;Chao-He Hai
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
12.Silicon Optical Emitter in CMOS Technology

机译：CMOS技术中的硅光发射器
- 作者：Hong-Da Chen;Hai-Jun Liu;Bei-Ju Huang;Ming Gu;Jin-Bin Liu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
13.The Impact of Forming Temperature on Material and Electrical Characteristics of Nickel Silicide Gate Electrode

机译：成型温度对硅化镍栅电极材料和电学特性的影响
- 作者：Xiaonan Shan;Yimao Cai;Chuan Xu;Yan Li;Ru Huang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
14.An investigation on the bonding surface energy versus time in low temperature wafer bonding

机译：低温晶圆键合中键合表面能随时间变化的研究
- 作者：XUAN XIONG ZHANG;BENOIT OLBRECHTS;JEAN-PIERRE RASKIN
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
15.The particle-size-controllable growth of silica sol abrasive for chemical mechanical polishing

机译：化学机械抛光用硅溶胶磨料的粒度可控生长
- 作者：Peng Gao;Yuling Liu;Suying Yao;Jianxin Zhang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
16.A Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semicoductor Capacitor (MOSC) Structure with HRP+GOD Catalyzing Layer

机译：基于具有HRP + GOD催化层的金属氧化物半导体电容器（MOSC）结构的新型干式葡萄糖传感器
- 作者：Jing-Jenn Lin;Po-Yen Hsu;You-Lin Wu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
17.A CMOS Magnetic Sensor Based on Synchronous Sampling Function

机译：基于同步采样功能的CMOS磁传感器
- 作者：Tong Liu;Da-Zhong Zhu;Qing Guo
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
18.Effect of Technology Scaling on Temperature Independent Point (TIP) in MOS Transistors

机译：工艺缩放对MOS晶体管中温度无关点（TIP）的影响
- 作者：Leung Wing Yan;Mansun Chan
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
19.Device Physics and Design Theory of Si, Ge and Si_(1-x)Ge_x Vertical Dual Carrier Field Effect Transistor Integrated Circuits on Insulator with Effective Channel Length of 5-18nm

机译：绝缘体上有效沟道长度为5-18nm的Si，Ge和Si_（1-x）Ge_x垂直双载流子场效应晶体管集成电路的器件物理和设计理论
- 作者：Y.Z. Xu;Y.F. Zhao;D. Bai;Y.H. Yang;R. Yang;G.H. Li;P. Xu;D.H. Huang;C. Huang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
20.A Monolithically Integrated Optical Receiver with Spatially Modulated Light Detector in CMOS Technology

机译：CMOS技术中具有空间调制光检测器的单片集成光接收器
- 作者：Bei-Ju Huang;Ming-Gu;Hai-Jun Liu;Jin-Bin Liu;Hong-Da Chen
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
21.Effect of Implanting Silicon in buried oxide on the radiation hardness of the Partially-Depleted CMOS/SOI

机译：将硅注入掩埋氧化物中对部分耗尽的CMOS / SOI的辐射硬度的影响
- 作者：He Wei;Zhang Zheng-xuan;Zhang En-xia;Qian Cong;Tian Hao;Wang Xi
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
22.A Novel Bonding Partial SOI Structure with Polysilicon Transition Layer

机译：具有多晶硅过渡层的新型键合部分SOI结构
- 作者：Tan Kaizhou;Feng Jian;Liu Yong;Xu Shiliu;Yang Mohua;Li Zhaoji;Li Kaicheng;Zhang Zhengfan;Liu Yukui;He Kaiquan
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- partial SOI;
- polysilicon transition layer;
- bonding;
23.Studies on Coplanar Radiation Sensor Based on Diamond Film

机译：基于金刚石膜的共面辐射传感器的研究
- 作者：Lin-Jun Wang;Jian-Min Liu;Qing-Feng Su;Run Xu;Hong-Yan Peng;Wei-Min Shi;Yi-Ben Xia
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
24.SiN-Masked GaN-on-Patterned-Silicon (GPS) Technique for fabrication of suspended GaN microstructures

机译：SiN掩埋图案化GaN硅（GPS）技术用于制造悬浮GaN微结构
- 作者：Zhenchuan Yang;Baoshun Zhang;Kei May Lau;Kevin J. Chen
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
25.A Nodal Analysis Model for Out-of-Plane Beamshaped Electrothermal Microactuators

机译：平面外束状电热微执行器的节点分析模型
- 作者：Rengang Li;Qing-An Huang;Weihua Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
26.A Low-Noise Charge Sensitive Amplifier for MEMS Capacitive Sensors

机译：用于MEMS电容传感器的低噪声电荷敏感放大器
- 作者：Zhanfei Wang;Zhihong Li;Xuewen Ni;Bangxian Mo
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- charge sensitive amplifier;
- MEMS sensor;
- chopper technique;
- capacitive sensor;
27.A Novel Programmable CMOS Temperature Switch

机译：新型可编程CMOS温度开关
- 作者：Yunlong Li;Nanjian Wu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
28.EWOD-based Variable-focus Liquid Lens

机译：基于EWOD的可变焦液体镜头
- 作者：KANG Ming;YUE Rui-Feng;WU Jian-Gang;LIU Li-Tian
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
29.Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

机译：用于柔性电子产品和3D-IC的单颗粒Si TFT和电路
- 作者：Ryoichi Ishihara;Vikas Rana;Ming He;Wim Metselaar;Kees Beenakker
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
30.A Study of Threshold Voltage for Poly-Silicon Thin Film Transistors

机译：多晶硅薄膜晶体管的阈值电压研究
- 作者：Ming Tang;S. T. Chang;C. S. Ho
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
31.Atomically Controlled CVD Technology for Group IV Semiconductors

机译：用于IV组半导体的原子控制CVD技术
- 作者：Junichi Murota;Masao Sakuraba;Bernd Tillack
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
32.The Elimination of Poly Stringer in Double Poly AMS Technology Development

机译：在Double Poly AMS技术开发中消除Poly Stringer
- 作者：Ahmad Sabirin Zoolfakar;Khairul Amalin;Azlina Mohd Zain;Richard A. Keating;Senior
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
33.Recent Progress of Heterogeneous Integration for Semiconductor Materials and Microsystems

机译：半导体材料与微系统异构集成的最新进展
- 作者：Eric Z.X. Liu;Vorrada Loryuenyong;Nathan W. Cheung
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
34.Mobility Enhancement Technology

机译：移动性增强技术
- 作者：F. Yuan;C. W. Liu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
35.Impact of strain-engineering on the low-frequency noise performance of advanced MOSFETs

机译：应变工程对高级MOSFET的低频噪声性能的影响
- 作者：E. Simoen;C. Claeys
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
36.Design and Fabrication of a Low Crosstalk SiO_2/Si Array Waveguide Gratings

机译：低串扰SiO_2 / Si阵列波导光栅的设计与制作
- 作者：Wei Li;Weidong Ma
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
37.Measurements and Analysis of Process Variability in 90nm CMOS

机译：90nm CMOS工艺变异性的测量与分析
- 作者：Borivoje Nikolic;Liang-Teck Pang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
38.Process Induced Stress for CMOS Performance Improvement

机译：工艺引起的应力以提高CMOS性能
- 作者：S. Fang;S. S. Tan;T. Dyer;Z. Luo;J.Yan;J.J. Kim;N. Rovedo;Z.Lun;J. Yuan;X.Chen;V.Chan;T.J. Tang;R. Amos;H. Ng;M. Ieong;S. Iyer;S. Crowder
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
39.High-k/Metal Gate Stack Technology for Advanced CMOS

机译：用于高级CMOS的High-k /金属栅堆叠技术
- 作者：Yasuo Nara;Fumio Ootsuka;Seiji Inumiya;Yuzuru Ohji
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
40.Characterization of HDP FSG Process

机译：HDP FSG工艺的表征
- 作者：Zheng-Jun Hu;Wen-Qiang Li;Shou-Mian Chen;Hong Shi;Wen-Fang Qin
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
41.Optimizing Post Cleaning of Tungsten Contact CMP to Improve the Yield of Logic Products with Copper Interconnect

机译：优化钨触点CMP的后清洗，以提高具有铜互连的逻辑产品的良率
- 作者：Xiu-Lan Cheng;Chun-Xin Zhi;Jun-Niang Liu;Feng-Ying He;Liang-Ren Chen;Bo-Chen Qiu;Da-Wei Ge
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- clean post-CMP;
- chemical mechanical polishing;
- yield improvement;
- tungsten plug;
- copper interconnect;
- metal 1 bridging;
42.Copper Pulse Plating on Ru/TaSiN Barrier

机译：Ru / TaSiN势垒上的铜脉冲电镀
- 作者：Lei Zeng;Sai-Sheng Xu;Jing-jing Tan;Li-feng Zhang;Wei Zhang;Li-Kang Wang;Xin-ping Qu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- copper interconnect;
- ruthenium;
- pulse plating;
43.ALD Growth of Ru on RIE-pretreated TaN substrate

机译：RIE预处理的TaN衬底上Ru的ALD生长
- 作者：Mi Zhou;Tao Chen;Jing-Jing Tan;Feng Zhao;Guo-Ping Ru;Bingzong Li;Xin-Ping Qu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
44.Damascene Process for Air-Gap Cu Interconnects Using Sacrificial Layer HSQ

机译：使用牺牲层HSQ的气隙铜互连的镶嵌工艺
- 作者：Cheng-Liang Hsieh;Ming-Chang Lin;Henry J. H. Chen;Fon-Shan Yeh
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- air-gap;
- Cu interconnects;
- HSQ;
- and sacrificial layer;
45.Investigation of Ru/TaN on low dielectric constant material with k=2.7

机译：k = 2.7的低介电常数材料上Ru / TaN的研究
- 作者：Jing-Jing Tan;Qi Xie;Mi Zhou;Tao Chen;Yu-Long Jiang;Xin-Ping Qu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
46.High Resolution Analysis of Cu Thin Oxide Formed on Cu in 32-nm Node Cu/Low-k Application

机译：在32 nm节点Cu / Low-k应用中在Cu上形成Cu薄氧化物的高分辨率分析
- 作者：Takayuki Ohba;Masakazu Sugiyama;Koichi Yamashita
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
47.A Brief Overview of Modern High-Speed SiGe HBTs

机译：现代高速SiGe HBT的简要概述
- 作者：Jae-Sung Rieh
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
48.Scaling Interconnects to Nanodimensions: Interfacial Chemistry Considerations

机译：缩放互连到纳米尺寸：界面化学注意事项
- 作者：J. A. Kelber
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
49.A Novel Uncooled a-Si Microbolometer for Infrared Detection

机译：用于红外检测的新型非冷却a-Si微测辐射热计
- 作者：Xing-Ming Liu;Lin Han;Li-Tian Liu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- bolometer;
- a-Si;
- polyimide;
- polyimide;
50.Magnetically levitated micro gyroscope and its software realized demodulation circuit

机译：磁悬浮微型陀螺仪及其软件实现的解调电路
- 作者：Huang Xiaogang;Liu Wu;Chen Wenyuan;Zhang Weiping
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
51.A Novel Approach to Compare the Charge Buildup Induced by Co-60 and X-Ray Radiation in SOI Buried Oxides

机译：比较SOI埋藏氧化物中Co-60和X射线辐射引起电荷累积的新方法
- 作者：H. Tian;Zh. X. Zhang;E. X. Zhang;W. He;H. Yang;W. J. Yu;X. Wang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
52.A Novel Cantilever Acoustic Sensor with Frequency Output Based on Resonant Tunneling Diodes

机译：基于谐振隧穿二极管的频率输出新型悬臂声传感器
- 作者：Jian Wang;Wen-Dong Zhang;Chen-Yang Xue;Ji-Jun Xiong;Jun Liu;Zhao-Min Tong
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
53.New Concept for Improving Characteristics of High-Voltage Power Devices by Buried Layers Modulation Effect

机译：通过埋层调制效应改善高压功率器件特性的新概念
- 作者：Baoxing Duan;Bo Zhang;Zhaoji Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
54.System-level Dynamic Simulation for A MEMS Clamped-Beam Based on the Mechanical Description

机译：基于力学描述的MEMS夹紧梁的系统级动态仿真
- 作者：Jian Zhang;Weihua Li;Qing-An Huang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- MEMS;
- system-level simulation;
- mechanical description;
- equivalent circuit;
55.An Analytical Model for the Output Voltage of Four-terminal Silicon Pressure Transducers

机译：四端硅压力传感器输出电压的解析模型
- 作者：Ke Daoming;Chen Junning;Liu Lei;Liu Qi;Xu Tailong
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
56.Laser frequency trimming technology based on FBAR

机译：基于FBAR的激光调频技术
- 作者：Jing-Yu Shao;De-Miao Wang;Shu-Rong Dong
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- laser;
- trimming;
- FBAR;
- thin film;
- frequency trimming;
- resonant frequency;
57.Modeling and Characterization of a Merged PiN Schottky Diodes with Semi-Super Junction Structure

机译：具有半超结结构的合并式PiN肖特基二极管的建模与表征
- 作者：Deng Xiaochuan;Zhang bo;Li Zhaoji;Chen Wanjun
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- high-voltage device;
- MPS;
- super junction;
58.UHF RFID Front-end with Magnetic Sensor

机译：带磁性传感器的UHF RFID前端
- 作者：Sheng-Hua Zhou;Nan-Jian Wu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
59.Ballasting Resistor Optimum for the Self-Heating Effect Compensation in RF Power HBTs

机译：射频功率HBT中自热效应补偿的镇流电阻最佳
- 作者：Jin Dong-Yue;Zhang Wan-Rong;Qiu Jian-Jun;Gao Pan
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
60.Improving the High Frequency Performance of SiGe HBT with New Lateral Structure and Process

机译：通过新的横向结构和工艺提高SiGe HBT的高频性能
- 作者：Yang Weiming;Shi Chen;Liu Sujuan;Chen Jianxin
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
61.A New Dual-Material Gate LDMOS for RF Power Amplifiers

机译：用于射频功率放大器的新型双材料门LDMOS
- 作者：Dao-ming Ke;Qi Liu;Jun-ning Chen;Shan Gao;Lei Liu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
62.Realization of Over 650V Double RESURF LDMOS with HVI for High Side Gate Drive IC

机译：使用HVI实现650V双RESURF LDMOS的高端栅极驱动IC
- 作者：Ming Qiao;Zhaoji Li;Bo Zhang;Jian Fang;Ming Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
63.Membrane structure FBAR fabricated with highly c-axis oriented A1N film based on platinum electrode

机译：基于铂电极的高c轴取向A1N膜制成的膜结构FBAR
- 作者：Kai Zhang;Haoshuang Gu;Guang Hu;Weiyong Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
64.Design and Simulation of On-chip RF Magnetic Medium Inductors

机译：片上射频磁介质电感的设计与仿真
- 作者：Chen Yang;Fan Zhang;Feng Liu;Li-Tian Liu;Tian-Ling Ren;Albert Wang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
65.Study on Dynamic Characterization of a Shunt Capacitive RF MEMS Switch

机译：并联电容RF MEMS开关的动态特性研究
- 作者：Zhihao Hou;Zewen Liu;Xiaofeng Lei;Guangwei Hu;Litian Liu;Zhijian Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
66.Design and Modeling of Reconfigurable MEMS Low Pass Filter

机译：可重构MEMS低通滤波器的设计与建模
- 作者：Miao Cai;Xing-long Guo;Yong Li;Lei Liu;Zong-sheng Lai
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
67.Design of Piezoelectric Resonant Filter with Tunable Bandwidth

机译：带宽可调的压电谐振滤波器的设计
- 作者：Jian Chen;Deyong Chen
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
68.Microstructures of Ge-dots/Si multilayered structures fabricated by Ni-induced lateral crystallization

机译：Ni诱导的横向结晶制备的Ge / Si多层结构的微观结构
- 作者：Yiqun Zhang;Bo Yan;Kuangji Zhang;Minhua Ye;Zheng Zuo;Yi Shi;Lin Pu;Ping Hanl Youdou Zheng
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
69.Extraction of R_(SD) and AL in Deep-Submicrometer MOSFETs

机译：深亚微米MOSFET中R_（SD）和AL的提取
- 作者：Yang-Hua Chang;Yi-Ling Lin
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
70.A Dielectric-Bridge-Type MEMS Series Contact Switch for 0-10GHz Applications

机译：适用于0-10GHz应用的电介质桥式MEMS系列接触开关
- 作者：Guang-Wei Hu;Ze-Wen Liu;Zhi-Hao Hou;Li-Tian Liu;Zhi-Jian Li
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
71.CMOS Image Sensors Using Feedback Reset Circuits for High Speed Operation

机译：CMOS图像传感器使用反馈复位电路进行高速操作
- 作者：Steve Hung-Lung Tu;Wen-Hung Su
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
72.Defect Passivation and Interface Engineering for High-K Gate Dielectric Device Performance and Reliability Enhancement

机译：缺陷钝化和接口工程，用于高K栅介电器件性能和可靠性增强
- 作者：Hsing-Huang Tseng
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
73.X-Ray Photoelectron Spectroscopy Study on Dielectric Properties at Gate Insulator Film/Si Interfaces

机译：X射线光电子能谱研究栅绝缘膜/ Si界面介电性能
- 作者：K. Hirose;H. Nohira;D. Kobayashi;T. Hattori
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
74.Oxidation process of HfO_2/SiO_2/Si structures observed by high-resolution RBS

机译：高分辨率RBS观察HfO_2 / SiO_2 / Si结构的氧化过程
- 作者：Zhao Ming;Kaoru Nakajima;Motofumi Suzuki;Kenji Kimura;Masashi Uematsu;Kazuyoshi Torii;Satoshi Kamiyama;Yasuo Nara;Heiji Watanabe;Kenji Shiraishi;Toyohiro Chikyow;Keisaku Yamada
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
75.Analysis of 1/f noise for CMOS with high-k Gate Dielectrics

机译：高k栅介质的CMOS的1 / f噪声分析
- 作者：T. Ohguro;K. Kojima;R Iijima;T. Watanabe;M Takayanagi;H.S. Momose;K. Ishimaru;H. Ishiuchi
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
76.Combinatorial materials exploration and composition tuning for the future gate stack structure

机译：组合材料探索和成分调整，以适应未来的门叠结构
- 作者：Toyohiro Chikyow;Ken Hasegawa;Tae Tamori;Kenji Ohmori;Naoto Umezawa;Kiyomi Nakajima;Keisaku Yamada;Hideomi Koinuma
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
77.Polycrystalline Si Optimization for 45nm node Ni-FUSI Gate

机译：Polycrys Taineshi O p Chimizachion前45m节点Nifushi门
- 作者：X. Shi;M. Schaekers;A. Rothschild;J.L. Everaert;A. Moussa;O. Richard;S. Bras;E. Rosseel;L. Date
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
78.Work Function Tunability by Incorporating Lanthanum and Aluminum into Refractory Metal Nitrides and a Feasible Integration Process

机译：通过将镧和铝结合到难熔金属氮化物中的功函数可调谐性和可行的集成工艺
- 作者：Xin Peng Wang;Ming-Fu Li;H. Y. Yu;C. Ren;W. Y. Loh;C. X. Zhu;Albert Chin;A. D. Trigg;Yee-Chia Yeo;S. Biesemans;G. O. Lo;D. L. Kwong
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
79.Dual-work-function Modulation for Ni-FUSI metal gate CMOS Technology

机译：Ni-FUSI金属栅极CMOS技术的双功函数调制
- 作者：Huajie Zhou;Qiuxia Xu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
80.A Comprehensive Semi-empirical Mobility Model for Strained-Si N-MOSFETs

机译：应变硅N-MOSFET的综合半经验迁移率模型
- 作者：Nagarajan Raghavan;Nam Hwang;Cher Ming Tan
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
81.Effect of Surface Roughness on Quasi-Ballistic Transport in Nano-Scale Ge and Si Double-Gate MOSFETs

机译：表面粗糙度对纳米级Ge和Si双栅极MOSFET中准弹道传输的影响
- 作者：Zhiliang Xia;Gang Du;Xiaoyan Liu;Jinfeng Kang;Ruqi Han
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
82.Nanoelectronics: Towards End of Scaling and Beyond

机译：纳米电子学：朝着可扩展的方向发展
- 作者：Bin Yu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
83.Critical technology issues for deca-nanometer MOSFETs

机译：十纳米MOSFET的关键技术问题
- 作者：Mikael OEstling;B. Gunnar Malm;Martin von Haartman;Julius Hallstedt;Per-Erik Hellstrom;Shili Zhang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
84.Novel MOSFET Devices for RF Circuits Applications

机译：用于射频电路应用的新型MOSFET器件
- 作者：R. Jhaveri;Y.-L. Chao;Jason C.-S. Woo
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
85.Prospective Characteristics of Nanoscale MOSFETs

机译：纳米MOSFET的预期特性
- 作者：Kenji Natori
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
86.CMOS devices architectures for the End of the Roadmap and Beyond

机译：路线图尽头的CMOS器件架构
- 作者：S.Deleonibus;B.de Salvo;L.Clavelier;T.Ernst;O.Faynot;T.Poiroux;M.Vinet
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
87.An Investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

机译：硅氧化物引起的FDSOI中硅厚度引起的电学特性变化的影响的研究
- 作者：Yi-Chuen Eng;Jyi-Tsong Lin;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
88.Technological Requirements for a Self-Aligned Lateral SiGe HBT with the SiGe Layer Formed by Ge Ion Implantation in Si Including Theoretical Performance

机译：硅中Ge离子注入形成SiGe层的自对准SiGe HBT自对准横向HBT的技术要求
- 作者：Mojtaba Joodaki;Hartmut Hillmer
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
89.Investigation of Nanowire Orientation and embedded Si_(1-x).Ge_x Source/Drain Influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET)

机译：纳米线取向和嵌入式Si_（1-x）.Ge_x源极/漏极对双硅纳米线场效应晶体管（TSNWFET）的影响的研究
- 作者：Ming Li;Sung Dae Suk;Kyoung Hwan Yeo;Yun-young Yeoh;Keunhwi Cho;Dong-Won Kim;Donggun Park
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
90.Characteristics of MBCFET (Multi-Bridge-Channel MOSFET) with Tall-Embedded-Gate (TEG)

机译：具有高嵌入式门（TEG）的MBCFET（多桥沟道MOSFET）的特性
- 作者：Eun Jung Yun;Min Sang Kim;Sung Min Kim;Sung-Young Lee;Dong-Won Kim;Donggun Park
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
91.Tungsten carbides as a diffusion barrier for Cu metallization

机译：碳化钨作为铜金属扩散的障碍
- 作者：Qi Xie;Yu-Long Jiang;C. Detavernier;R. L. Van Meirhaeghe;Xin-Ping Qu
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
92.An Improved CMOS-compatible Bulk-silicon-micromachined Microemitter for Dynamic Infrared Scene Projector

机译：用于动态红外场景投影机的改进型CMOS兼容体硅微加工微型发射极
- 作者：Bin Ma;Pingzhi Liang;Junjie Si;Erzhu Chen;Shijun Chen;Xuemin Zhang;Yi Ding
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- infrared;
- scene projector;
- CMOS;
- microemitter;
- microheater;
- apparent temperature;
93.Effects of Gate to Drain Capacitance to the AC Characteristics of Trench Power MOSFET

机译：栅漏电容对沟道功率MOSFET交流特性的影响
- 作者：Shaohui Pan;Lunwen He;LK.Wang;David Wei. Zhang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
94.The Influence of Source and Drain Junction Depth on the Sub-50nm MOSFET Devices

机译：源极和漏极结深度对50nm以下MOSFET器件的影响
- 作者：Luan Su-zhen;Liu Hong-xia;Hao Yue
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- source and drain junction depth;
- short-channel effect (SCE);
- off -current;
95.Optimization of Excimer Laser Annealing on Low Temperature Polysilicon for Thin Film Transistor Applications

机译：薄膜晶体管应用低温多晶硅准分子激光退火的优化
- 作者：T.C. Cheng;W.C. Chang;K.F. Yarn;C.R Lo;J.K. Kuo
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
96.A Novel Structure of Non-planar RF Spiral Inductor Based on Silicon

机译：基于硅的非平面射频螺旋电感的新型结构
- 作者：Shenqun Tang;Yanling Shi;Tianxing Luo;Yanfang Ding;Yong Wang;Jun Zhu;Shoumian Chen;Yunhang Zhao
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
- non-planar spiral inductor;
- Q factor;
- substrate loss;
97.Development on Si optoelectronic receiving and processing chip

机译：Si光电接收处理芯片的开发
- 作者：Yang Weidong;Zhang Zhengfan;Li Kaicheng;Ou Hongqi;Huang Wengang
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
98.'Choices for future interconnect materials and processing'

机译：“未来互连材料和加工的选择”
- 作者：Toh-Ming Lu;Gregory Ten Eyck
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
99.Xe implantation in SiO_2: low-k applications

机译：SiO_2中的Xe注入：低k应用
- 作者：E. Ntsoenzok;H. Assaf;M.O. Ruault;S.Ashok
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年
100.Improvement of Thermal Stability of Multi-finger Power SiGe HBTs Using Emitter-ballasting-resistor-free Designs

机译：采用无发射极镇流电阻的设计提高多指功率SiGe HBT的热稳定性
- 作者：ZHANG Wan-rong;JIN Dong-yue;YANG Jing-wei;HE Li-jian;SHA Yong-ping;WANG Yang;ZHANG Wei
- 会议名称：《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》 | 2006年