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International Workshop on Computational Electronics
International Workshop on Computational Electronics
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1.
Three-dimensional quantum transport simulation of ultra-small FinFETs
机译:
超小型铜倍数的三维量子传输模拟
作者:
Takeda H.
;
Mori N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
ballistic transport;
Green's function methods;
electron-phonon interactions;
3D quantum transport simulation;
ultra-small FinFET;
non-equilibrium Green's function;
electron-phonon interaction;
2.
Electronic transport in discotic liquid crystal columns
机译:
盘式液晶柱中的电子传输
作者:
Lever L.
;
Bushby R.J.
;
Kelsall R.W.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
discotic liquid crystals;
hole mobility;
phonon-phonon interactions;
vacancies (crystal);
dislocations;
Monte Carlo methods;
molecular electronics;
electronic transport;
discotic liquid crystal columns;
discotic molecular columns;
hopping transport;
hole mobilities;
complementary triphenylene species;
highly ordered discotic columns;
weak temperature dependence;
band transport;
Monte Carlo simulation;
hole transport;
1D periodic array;
vacancies;
dislocations;
material disorder;
stochastic distribution;
coherence lengths;
phonon scattering;
out-of-plane vibrations;
carbon-hydrogen bonds;
aromatic core;
3.
A critical examination of the basis of macroscopic quantum transport approaches
机译:
对宏观量子传输方法的基础的关键检查
作者:
Narayanan V.
;
Kan E.C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum electrodynamics;
semiconductor device models;
carrier density;
semiconductor heterojunctions;
inversion layers;
tunnelling;
Green's function methods;
macroscopic quantum transport;
quantum hydrodynamics;
quantum effect simulation;
semiconductor devices;
equilibrium Wigner function;
carrier energy;
equilibrium density matrix;
heterojunctions;
density gradient method;
MOS inversion layer transport modeling;
tunneling phenomena;
Greens function;
stress tensor;
local carrier gas density;
hydrodynamic hierarchy;
current transport equation;
barrier potentials;
barrier heights;
transport simulations;
4.
Multi-dimensional tunneling in density-gradient theory
机译:
密度梯度理论中的多维隧道
作者:
Ancona M.G.
;
Lilja K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
tunnelling;
electron density;
semiconductor device models;
multidimensional tunneling;
density-gradient theory;
device simulation;
electron density;
5.
Strain-dependent hole masses and piezoresistive properties of silicon
机译:
硅的应变依赖孔肿块和压阻性能
作者:
Matsuda K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
hole mobility;
molecular weight;
piezoresistive devices;
piezoresistance;
silicon;
strain-dependent hole masses;
piezoresistive properties;
band mixing mass change;
light hole;
spin-orbit split-off bands;
degeneracy lifting mass change;
Si;
6.
Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs
机译:
双栅MOSFET的蒙特卡罗和Negf模拟的比较
作者:
Ravishankar R.
;
Kathawala G.
;
Ravaioli U.
;
Hasan S.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Green's function methods;
nanoelectronics;
Monte Carlo simulation;
NEGF simulations;
double gate MOSFET;
University of Illinois;
2D quantum simulator;
Purdue University;
quantum correction;
particle-based transport model;
charge distribution;
quantum mechanical approach;
charge density;
7.
Accurate deterministic numerical simulation of p-n junctions
机译:
P-N结的准确确定性数值模拟
作者:
Godoy A.
;
Gonzales P.
;
Carillo J.A.
;
Gamiz F.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
p-n junctions;
semiconductor device models;
finite difference methods;
Boltzmann equation;
Poisson equation;
phonons;
electron-hole recombination;
deterministic numerical simulation;
p-n junction simulation;
Boltzmann equation;
bipolar carrier device simulation;
FD-WENO scheme;
finite differences weighted essentially nonoscillatory;
transport equation;
majority carrier;
space charge region;
Poisson equation;
acoustic phonons;
elastic approximation;
optical nonpolar phonons;
direct generation-recombination;
indirect generation-recombination;
8.
A coupled 3-D PNP/ECP model for ion transport in biological ion channels
机译:
用于生物离子通道中的离子输送的耦合3-D PNP / ECP模型
作者:
Zhicheng Yang
;
van der Straaten T.A.
;
Ravaioli U.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
biomembrane transport;
chemical potential;
density functional theory;
carrier density;
Newton method;
coupled 3D PNP-ECP model;
ion transport;
biological ion channels;
Poisson-Nernst-Planck theory;
drift-diffusion theory;
macroscopic current;
ion density;
entropic effects;
finite-sized ions;
water molecules;
nonsingular charge distribution;
electrochemical potential;
excess chemical potential;
3D PNP solver;
computational platform PROPHET;
local charge carrier;
water density;
density functional theory;
electrostatic potential;
decoupled feedback method;
Newton method;
charge carrier density;
ECP equations;
PNP equations;
9.
Search for optimum and scalable COSMOS
机译:
搜索最佳和可扩展的宇宙
作者:
Kaya S.
;
Al-Ahmadi A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
CMOS logic circuits;
circuit optimisation;
circuit simulation;
electronic engineering computing;
optimum COSMOS;
structural parameter optimization;
leakage performance;
switching performance;
COSMOS scalability;
static CMOS logic circuits;
built-in orthogonality;
10.
A comparative study of numerical algorithms in calculating eigenpairs of the master equation for protein folding kinetics
机译:
数值算法计算蛋白质折叠动力学母型方程特征算法的比较研究
作者:
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
proteins;
eigenvalues and eigenfunctions;
Jacobian matrices;
numerical algorithms;
eigenpairs;
protein folding kinetics;
eigenvalue algorithms;
nonpositive eigenvalues;
eigenvectors;
Arnoldi method;
Jacobi-Davidson method;
QR algorithm;
11.
Effective mass approach for n-MOSFETs on arbitrarily oriented wafers
机译:
任意导向晶圆上的N-MOSFET的有效群发方法
作者:
Rahman A.
;
Lundstrom A.
;
Ghosh A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
transport processes;
wafer-scale integration;
electronic engineering computing;
electrostatic discharge;
silicon;
germanium compounds;
elemental semiconductors;
n-MOSFET;
arbitrarily oriented wafers;
mass equation approach;
electrostatic potential;
dipolar coupling;
Zener tunneling;
constant energy ellipsoid;
Si;
Ge;
12.
Robust computational models of quantum transport in electronic devices
机译:
电子设备中量子传输的鲁棒计算模型
作者:
Fedoseyev A.I.
;
Przekwas A.
;
Turowski M.
;
Wartak M.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanoelectronics;
tunnelling;
technology CAD (electronics);
Schottky barriers;
Wigner distribution;
Boltzmann equation;
quantum transport models;
quantum current;
nanoscale electronic device simulation;
device simulator software;
tunneling current simulation;
direct tunnel current;
reverse tunnel current;
tunnel junction;
Schottky contact;
gate induced drain leakage;
drift-diffusion approach;
CFDRC-TCAD simulator;
thin potential barrier;
tunnel mobility;
Wigner function method;
quantum Boltzmann transport model;
13.
Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs
机译:
双栅MOSFET的蒙特卡罗和Negf模拟的比较
作者:
Ravishankar R.
;
Kathawala G.
;
Ravaioli U.
;
Hasan S.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Green's function methods;
nanoelectronics;
Monte Carlo simulation;
NEGF simulations;
double gate MOSFET;
University of Illinois;
2D quantum simulator;
Purdue University;
quantum correction;
particle-based transport model;
charge distribution;
quantum mechanical approach;
charge density;
14.
Electronic properties of silicon nanowires
机译:
硅纳米线的电子特性
作者:
Yun Zheng
;
Lake R.
;
Alam K.
;
Rivas C.
;
Boykin T.B.
;
Klimeck G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
nanowires;
genetic algorithms;
Green's function methods;
electronic properties;
silicon nanowires;
wire thickness;
bangap effect;
conduction valley splitting;
hole band splitting;
effective masses;
single-band effective mass equation;
nearest neighbor model;
Hamiltonian matrix;
genetic algorithm;
transmission coefficients;
non-equilibrium Green function;
recursive Green function algorithm;
15.
A self-consistent quantum mechanical simulation of p-channel strained SiGe MOSFETs
机译:
P沟道应变SiGE MOSFET的自一致量子力学模拟
作者:
Krishnan S.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
transport processes;
Monte Carlo methods;
ohmic contacts;
eigenvalues and eigenfunctions;
Ge-Si alloys;
self-consistent quantum mechanical simulation;
p-channel strained SiGe MOSFET;
hole current enhancement;
Schrodinger-Monte Carlo-Poisson transport model;
carrier eigenstates;
Schrodinger equation;
errors minimization;
quantum simulation;
channel boundaries;
Neumann boundary conditions;
ohmic contacts;
Dirichlet boundary conditions;
channel region;
25 nm;
SiGe;
16.
Phonon-limited transport in carbon nanotubes using the Monte Carlo method
机译:
使用Monte Carlo方法在碳纳米管中有限的传输
作者:
Pennington G.
;
Akturk A.
;
Goldsman N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
nanoelectronics;
Monte Carlo methods;
electron mobility;
electron-phonon interactions;
semiconductor device models;
phonon-limited transport;
Monte Carlo method;
nanoelectronics;
transport properties;
single-walled carbon nanotubes;
semiclassical transport simulations;
inelastic phonon scattering;
transport model;
momentum relaxation length;
electronic properties;
phonon properties;
phonon-limited mobility;
tube diameter;
surrounding fields;
electron energy;
phonon energy;
wavevector space;
single electron subband;
single phonon subbranch;
17.
RF performance of strained SiGe pMOSFETs: linearity and gain
机译:
紧张SiGe PMOSFET的RF性能:线性和增益
作者:
Wei Ma
;
Kaya S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
silicon-on-insulator;
Ge-Si alloys;
strained SiGe pMOSFET;
linearity;
intrinsic gain;
SOI thickness;
Ge concentration;
graded channel MOSFET;
SiGe;
18.
Modeling of transport through semiconductor quantum dots: an approach based on the direct solution of the coupled Poisson-Boltzmann equations
机译:
通过半导体量子点的运输建模:一种基于耦合泊松 - Boltzmann方程的直接解决方案的方法
作者:
Csontos D.
;
Ulloa S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
transport processes;
Boltzmann equation;
Poisson equation;
electric fields;
finite difference methods;
transport modeling;
semiconductor quantum dots;
coupled Poisson-Boltzmann equations;
self-consistent solution;
steady-state Boltzmann transport equation;
inhomogeneous transport;
nonlinear coupled Poisson-Boltzmann system;
finite difference methods;
high-field transport characteristics;
high-temperature transport characteristics;
charge redistribution;
electron distribution function;
19.
A comparative study of numerical algorithms in calculating eigenpairs of the master equation for protein folding kinetics
机译:
数值算法计算蛋白质折叠动力学母型方程特征算法的比较研究
作者:
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
proteins;
eigenvalues and eigenfunctions;
Jacobian matrices;
numerical algorithms;
eigenpairs;
protein folding kinetics;
eigenvalue algorithms;
nonpositive eigenvalues;
eigenvectors;
Arnoldi method;
Jacobi-Davidson method;
QR algorithm;
20.
Spectral element method for the Schrodinger-Poisson system
机译:
Schrodinger-Poisson系统的光谱元件方法
作者:
Candong Cheng
;
Qing Huo Liu
;
Massoud H.Z.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanoelectronics;
finite element analysis;
quantum well devices;
Legendre polynomials;
Newton method;
Schrodinger equation;
Poisson equation;
potential energy functions;
predictor-corrector methods;
MOSFET;
spectral element method;
Schrodinger-Poisson system;
self-consistent solution;
semiconductor nanodevice simulation;
Gauss-Lobatto-Legendre polynomials;
Schrodinger equation;
potential energy;
charge distributions;
predictor-corrector algorithm;
self-consistent iteration;
nonlinear Poisson equation;
Newton method;
infinite quantum well;
MOSFET;
21.
Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors
机译:
纳米级弹性场效应晶体管噪声分析与数值研究
作者:
Iannaccone G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
semiconductor device noise;
shot noise;
ballistic transport;
nanoscale ballistic field effect transistors;
shot noise;
drain current;
gate current;
ballistic MOSFET;
22.
Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit: a statistical study
机译:
在缩放限制的传统MOSFET中的内在参数波动:统计研究
作者:
Adamu-Lema F.
;
Roy G.
;
Brown A.R.
;
Asenov A.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
doping profiles;
nanoelectronics;
intrinsic parameter fluctuations;
scaling limit;
MOSFET device;
atomistic device simulator;
doping profile;
simulated I/sub D/-V/sub G/ characteristics;
doping concentrations;
short channel control;
35 nm;
25 nm;
18 nm;
23.
Search for optimum and scalable COSMOS
机译:
搜索最佳和可扩展的宇宙
作者:
Kaya S.
;
Al-Ahmadi A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
CMOS logic circuits;
circuit optimisation;
circuit simulation;
electronic engineering computing;
optimum COSMOS;
structural parameter optimization;
leakage performance;
switching performance;
COSMOS scalability;
static CMOS logic circuits;
built-in orthogonality;
24.
Electron exchange interaction in electronically confined Si quantum dots
机译:
电子局限性Si量子点中的电子交换相互作用
作者:
Seungwon Lee
;
von Allmen P.
;
Oyafuso F.
;
Klimeck G.
;
Boykin T.B.
;
Coppersmith S.N.
;
Friesen M.
;
Eriksson M.A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
exchange interactions (electron);
tight-binding calculations;
quantum well devices;
quantum computing;
elemental semiconductors;
silicon;
electron exchange interaction;
electronically confined Si quantum dots;
sp/sup 3/d/sup 5/s* empirical tight-binding model;
exchange energy;
P donors;
fast oscillatory behavior;
inter-donor distance;
Si:P based quantum computer architecture;
exponential decay;
inter-dot distance;
tensile biaxial strain;
Si quantum well;
Si band structure;
electron wave function;
Bloch oscillations;
Si;
25.
Smart dust: Monte Carlo simulation of self-organised transport
机译:
智能粉尘:蒙特卡罗仿真的自组织运输
作者:
Barker J.
;
Barmpoutis A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
wireless sensor networks;
nanopositioning;
Monte Carlo methods;
circuit complexity;
electronic engineering computing;
network topology;
network synthesis;
circuit simulation;
Smart dust;
Monte Carlo simulation;
self-organised transport;
millimeter scale autonomous systems;
distributed wireless sensor networks;
dust motes;
mechanical complexity;
electronic complexity;
26.
Hybrid-basis modeling of electron transport through molecules on silicon
机译:
电子传输通过硅分子的混合基础建模
作者:
Gengchiau Liang
;
Ghosh A.
;
Rakshit T.
;
Datta S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
fullerenes;
electron transport theory;
molecular electronics;
molecular configurations;
elemental semiconductors;
ab initio calculations;
EHT calculations;
density functional theory;
Green's function methods;
scanning tunnelling spectroscopy;
silicon;
hybrid-basis modeling;
electron transport;
molecular electronics;
molecular devices;
nanoscale systems;
conducting properties;
nonequilibrium condition;
EHT parameters;
bulk silicon;
ab-initio basis set;
contact surface atoms;
surface Green function;
density-functional treatment;
scanning tunneling spectroscopy measurements;
conductance-voltage curves;
organic molecules;
negative-differential resistance;
molecular levels;
silicon band-edge;
C60 molecules;
27.
Numerical simulation for direct tunneling current in poly-Si-gate MOS capacitors
机译:
多Si栅极MOS电容器直接隧道电流的数值模拟
作者:
Okamoto M.
;
Mori N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOS capacitors;
tunnelling;
field effect devices;
nanoelectronics;
MOSFET;
semiconductor device models;
Schrodinger equation;
Poisson equation;
numerical analysis;
numerical simulation;
direct tunneling current;
polySi-gate MOS capacitors;
gate-oxide thickness;
MOSFET;
channel length;
gate current;
electron tunneling;
quantum effects;
tunneling transition rate;
standoff distance;
quantum confinement;
channel region;
polySi-gate devices;
gate region depletion-layer;
Gamow formulation;
electron escape;
Gamow method;
Schrodinger-Poisson solver;
confined states;
28.
Numerical parallel algorithms for large-scale nanoelectronics simulations using NESSIE
机译:
使用Nessie的大规模纳米电子模拟的数值并行算法
作者:
Polizzi E.
;
Sameh A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
parallel algorithms;
nanoelectronics;
linear systems;
iterative methods;
numerical parallel algorithms;
nanoelectronics simulations;
NESSIE;
linear systems;
uniprocessor;
Krylov subspace iterative method;
electron density;
Linux cluster;
MPI directives;
local memory;
linear solver SPIKE;
ScaLAPACK;
parallel trace-minimization algorithm;
LAPACK schemes;
eigenpairs;
29.
TCAD process/device modeling challenges and opportunities for the next decade
机译:
TCAD过程/设备建模下一年的挑战和机遇
作者:
Giles M.D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
technology CAD (electronics);
semiconductor device models;
device modeling;
technology CAD process;
device simulation tools;
30.
Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures
机译:
GaAs / Algaas分裂栅异质结构中自发自旋极化的理论证据
作者:
Ashok A.
;
Akis R.
;
Vasileska D.
;
Ferry D.K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum wells;
magnetoelectronics;
spin polarised transport;
two-dimensional electron gas;
density functional theory;
III-V semiconductors;
gallium arsenide;
aluminium compounds;
quantum point contacts;
spontaneous spin polarization;
split-gate heterostructures;
spintronics;
spin degree of freedom;
high density memories;
nonvolatile reprogrammable logic;
quantum computing;
carrier injection;
carrier transport;
carrier detection;
spin polarized carriers;
device heterostructures;
conductance measurements;
quantum point contacts;
lateral confinement;
high mobility 2D electron gas;
modulation doped heterostructure;
spin-polarized density functional theory;
quantum wells;
GaAs-AlGaAs;
31.
Bennett and Landauer clocking in quantum-dot cellular automata
机译:
班内特和兰德拉姆在量子点蜂窝自动机中的时钟
作者:
Liu M.
;
Lent C.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum gates;
quantum dots;
cellular automata;
logic circuits;
electronic engineering computing;
circuit complexity;
Landauer clocking;
quantum-dot cellular automata;
Bennett clocking design;
QCA circuits;
cell array;
circuit complexity;
clock signal;
energy dissipation;
logically irreversible systems;
32.
Atomistic simulation of the electronic transport in organic nanostructures: electron-phonon and electron-electron interactions
机译:
有机纳米结构中电子传输的原子模拟:电子 - 声子和电子相互作用
作者:
Pecchia A.
;
Gagliardi A.
;
Di Carlo A.
;
Niehaus T.
;
Frauenheim T.
;
Lugli P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
density functional theory;
Green's function methods;
organic semiconductors;
nanostructured materials;
electron-electron interactions;
electron-phonon interactions;
atomistic simulation;
electronic transport;
organic nanostructures;
electron-phonon interactions;
electron-electron interactions;
GW correction;
DFTB method;
molecular systems;
sandwiched in-between electrodes;
first-principle correction;
tunneling current;
33.
A unified modeling of NBTI and hot carrier injection for MOSFET reliability
机译:
MOSFET可靠性NBTI和热载体喷射的统一建模
作者:
Kufluoglu H.
;
Alam M.A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
hot carriers;
semiconductor device models;
semiconductor device reliability;
charge injection;
interface states;
hot carrier injection;
MOSFET reliability;
negative bias temperature instability;
HCI induced interface trap generation;
characteristic time-dependence;
HCI degradation;
geometry-dependence;
surround gate devices;
34.
Simulation and optimization of spin-orbit quantum dot circuit with integrated quantum point contact read-out
机译:
集成量子点联系人旋转轨道量子点电路的仿真与优化读数
作者:
Lingxiao Zhang
;
Melkinov D.
;
Leburton J.-P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum dots;
spin-orbit interactions;
quantum point contacts;
readout electronics;
electron density;
circuit simulation;
Poisson equation;
density functional theory;
Thomas-Fermi model;
circuit optimisation;
quantum gates;
circuit simulation;
circuit optimization;
spin-orbit quantum dot circuit;
integrated quantum point contact;
computer simulation;
laterally coupled quantum dot circuit;
charge read-out;
electron density;
3D Poisson equations;
3D Kohn-Sham equations;
local spin density approximation;
Thomas-Fermi approximation;
charge density;
differential equations;
nonuniform 3D mesh;
doping profiles;
electronic states;
eigenenergy spectra;
LCQD confinement;
external gate bias;
Slater rule;
detector sensitivity;
QPC gate geometry;
electron charging;
potential energy saddle point;
Buttiker formula;
35.
Manipulating of resonances in conductance of an electron waveguide with antidots
机译:
用防辐射测量电子波导电导的共振
作者:
Satanin A.M.
;
Joel Y.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
electron waveguides;
bound states;
electric admittance;
resonance manipulation;
electron waveguide;
antidots;
narrow group state interference;
scattering amplitude;
repulsive potentials;
decaying states;
quasibound states;
background second-subband;
resonant group states;
Fano resonance;
coupling parameter;
degenerate states;
degenerate resonances;
conductance resonances;
36.
Atomistic treatment of nanotube-metal interfaces
机译:
纳米管 - 金属界面的原子处理
作者:
Kienle D.
;
Ghosh A.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
transport processes;
interface states;
band structure;
work function;
quantum wires;
quantum dots;
Green's function methods;
Poisson equation;
nanotube devices;
atomistic treatment;
nanotube-metal interfaces;
silicon-based devices;
atomistic dimensions;
post-CMOS devices;
quantum wire;
quantum dot;
electronic structure calculations;
metal bandstructures;
surface physics calculations;
geometry states;
surface states;
relaxed metal-nanotube interfaces;
quantum chemical codes;
tube atoms;
metal atoms;
electrostatic codes;
charge rearrangement;
potential rearrangement;
workfunction difference;
quantum transport calculations;
nonequilibrium transport;
atomistic code;
nonequilibrium Green function;
device bandstructure modeling;
Hamiltonian potential;
self-consistent electrostatic potential;
Poisson equation;
tube levels;
self-energy matrices;
37.
Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism
机译:
使用非平衡绿色功能形式主义的碳纳米管场效应晶体管原子模拟
作者:
Jing Guo
;
Datta S.
;
Anantram M.P.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
field effect transistors;
Green's function methods;
Poisson equation;
Schrodinger equation;
semiconductor device models;
atomistic simulation;
carbon nanotube;
field effect transistors;
Green function formalism;
low bias transport;
high-K gate insulators;
carrier mobility;
ballistic operation;
Poisson equations;
Schrodinger equations;
38.
Bennett and Landauer clocking in quantum-dot cellular automata
机译:
班内特和兰德拉姆在量子点蜂窝自动机中的时钟
作者:
Liu M.
;
Lent C.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum gates;
quantum dots;
cellular automata;
logic circuits;
electronic engineering computing;
circuit complexity;
Landauer clocking;
quantum-dot cellular automata;
Bennett clocking design;
QCA circuits;
cell array;
circuit complexity;
clock signal;
energy dissipation;
logically irreversible systems;
39.
Electrostatics of 3D carbon nanotube field-effect transistors
机译:
3D碳纳米管场效应晶体管的静电装置
作者:
Neophytou N.
;
Jing Guo
;
Lundstorm M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
carbon nanotubes;
electrostatics;
electrostatics;
3d carbon nanotube field-effect transistors;
CNFET structure;
charge transfer;
30 nm;
40.
Theoretical study of molecular quantum dot cellular automata
机译:
分子量子点细胞自动机的理论研究
作者:
Yuhui Lu
;
Lent C.S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
cellular automata;
quantum dots;
molecular electronics;
ab initio calculations;
quantum chemistry;
electron mobility;
molecular quantum dot cellular automata;
molecular electronics;
quantum-chemistry ab initio analysis;
Trans-Ru(dppm)/sub 2/(C=CFc)(NCCH/sub 2/CH/sub 2/NH/sub 2/) dication;
bistable charge configuration;
binary information;
ferrocence group;
Ru(dppm)/sub 2/ group;
carbon-carbon triple bond;
tunneling junction;
external electric field;
electron mobility;
critical driven field;
41.
Efficient simulation of the full Coulomb interaction in three dimensions
机译:
高效模拟三维完整库仑相互作用
作者:
Heitzinger C.
;
Ringhofer C.
;
Ahmed S.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
transport processes;
electron-electron interactions;
semiconductor device models;
MOSFET;
full Coulomb interaction simulation;
3D simulation;
nanodevice simulation;
3D fast multipole method;
semiconductor transport simulation;
electron-electron interactions;
electron-impurity interactions;
MC device simulation;
42.
Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs
机译:
DGSOI MOSFET中电子速度过冲的Monte Carlo仿真
作者:
Gamiz F.
;
Godoy A.
;
Sampedro C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
silicon-on-insulator;
semiconductor device models;
Monte Carlo methods;
carrier mobility;
Poisson equation;
Schrodinger equation;
Monte Carlo simulation;
electron velocity overshoot;
DGSOI MOSFET;
metal oxide semiconductor field effect transistors;
current drive;
transconductance;
double gate MOSFET;
self-consistent Poisson-Schroedinger solver;
low field mobilities;
average conduction effective mass;
wavefunction overlapping;
inversion charges;
silicon layer thickness;
43.
Modeling and simulation of electron injection during programming in Twin Flash/spl trade/ devices based on energy transport and the non-local lucky electron concept
机译:
基于能量运输和非本地幸运电子概念的双闪光/拼接贸易/设备编程电子注入的建模与仿真
作者:
Hagenbeck R.
;
Decker S.
;
Fischer J.M.
;
Isler M.
;
Lau F.
;
Mikolajick T.
;
Tempel G.
;
Haibach P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
flash memories;
semiconductor device models;
hot carriers;
electron transport theory;
Boltzmann equation;
Monte Carlo methods;
electron injection;
Twin Flash devices;
energy transport;
electric fields;
hot carrier effects;
charge carrier;
Boltzmann transport equation;
Monte Carlo technique;
classical continuity equation;
differential equation;
nonlocal lucky electron model;
field line tracing;
oxide barrier;
44.
A unified modeling of NBTI and hot carrier injection for MOSFET reliability
机译:
MOSFET可靠性NBTI和热载体喷射的统一建模
作者:
Kufluoglu H.
;
Alam M.A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
hot carriers;
semiconductor device models;
semiconductor device reliability;
charge injection;
interface states;
hot carrier injection;
MOSFET reliability;
negative bias temperature instability;
HCI induced interface trap generation;
characteristic time-dependence;
HCI degradation;
geometry-dependence;
surround gate devices;
45.
An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy
机译:
一种改进的翘曲,非抛物度和退化频段电离杂质散射的改进的蒙特卡罗算法
作者:
Gomez-Campos F.M.
;
Rodriguez-Bolivar S.
;
Carceller J.E.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
hole mobility;
impurities;
Monte Carlo methods;
scattering;
Monte Carlo algorithm;
ionized impurity scattering;
hole scattering;
ionized impurities;
mass theory;
Brooks-Herrings formalism;
46.
Comparison of non-equilibrium Green's function and quantum-corrected Monte Carlo approaches in nano MOS simulation
机译:
纳米MOS模拟中非平衡绿色功能和量子校正蒙特卡罗方法的比较
作者:
Tsuchiya H.
;
Ogawa M.
;
Miyoshi T.
;
Svizhenko A.
;
Anantram M.P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
Green's function methods;
impurity scattering;
plasmons;
nanoelectronics;
ballistic transport;
nonequilibrium Green function;
quantum-corrected Monte Carlo approaches;
nano MOS simulation;
ultra-short channel device;
impurity effect;
plasmon scatterings;
drain current degradation;
dominant scattering processes;
carrier quasi-ballistic behaviors;
nano-scale MOSFET;
47.
Monte Carlo hole mobility calculations with a first principles alloy scattering approach
机译:
Monte Carlo Hole Hop的流动性计算与合金散射方法的第一个原理
作者:
Zorman B.
;
Krishnan S.
;
Vasileska D.
;
Jialei Xu
;
Van Schilfgaarde M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
hole mobility;
Monte Carlo methods;
S-parameters;
scattering;
alloys;
Monte Carlo hole mobility calculations;
first principles alloy scattering approach;
first principles density functional theory;
Broyden-Fletcher-Goldfarb-Shanno minimization;
48.
Screening of water dipoles inside finite-length armchair carbon nanotubes
机译:
有限长度扶手碳纳米管内水偶极子的筛选
作者:
Yan Li
;
Deyu Lu
;
Rotkin S.V.
;
Schulten K.
;
Ravaioli U.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
tight-binding calculations;
ab initio calculations;
energy gap;
dielectric properties;
water dipoles;
finite-length armchair carbon nanotubes;
short single-walled carbon nanotubes;
delocalized /spl pi/-electrons;
electronic structure;
dielectric properties;
finite-length armchair SWNT;
self-consistent /spl pi/-orbital tight binding method;
third nearest neighbor interaction;
periodic oscillation;
finite band gap;
nanotube length;
HOMO-LUMO orbitals;
ab initio calculations;
uniform electric fields;
parallel screening constant /spl epsiv//sub /spl par//;
perpendicular screening constant /spl epsiv//sub /spl perp//;
49.
Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples
机译:
QDAME中的任意晶体取向与GE 7.5 NM DGFET示例
作者:
Laux S.E.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
MOSFET;
quantum interference devices;
Schrodinger equation;
germanium;
quantum device analysis;
modal evaluation;
device simulations;
crystallographic orientation;
real-space coordinate systems;
k-space coordinate systems;
NanoMOS;
Ge DGFET;
Schrodinger equation;
boundary conditions;
device geometry;
transport lumping;
7.5 nm;
Ge;
50.
Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs
机译:
周围栅极应变硅纳米线FET的硅 - 锗结构
作者:
Jam-Wam Lee
;
Yiming Lee
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
nanowires;
semiconductor device models;
Ge-Si alloys;
silicon-germanium structure;
surrounding-gate strained silicon nanowire FET;
double-gate strained silicon field effect transistors;
strained silicon devices;
3D nanodevice simulator;
SiGe;
51.
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: their relevance to science and to mainstream VLSI technology
机译:
三十年的半导体电子运输蒙特卡洛模拟:与科学和主流的VLSI技术相关
作者:
Fischetti M.V.
;
Laux S.E.
;
Solomon P.M.
;
Kumar A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
transport processes;
VLSI;
semiconductor device models;
elemental semiconductors;
III-V semiconductors;
indium compounds;
silicon;
germanium;
Monte Carlo simulations;
electronic transport;
VLSI technology;
scaled MOSFET;
channel lengths;
transport mass;
III-V compound semiconductors;
surface orientations;
band-to-band leakage;
strained-Si devices;
ballistic transport;
Si;
Ge;
InP;
InGaAs;
52.
Influence of ballistic effects in ultra-small MOSFETs
机译:
弹道效应对超小MOSFET的影响
作者:
Saint Martin J.
;
Aubry-Fortuna V.
;
Bournel A.
;
Dollfus P.
;
Galdin S.
;
Chassat C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
ballistic transport;
Monte Carlo methods;
ballistic effects;
ultra-small MOSFET;
ballistic transport;
double gate MOSFET;
semi-classical Monte Carlo simulation;
ballistic electrons;
25 nm;
10 nm;
Si;
53.
Circuit modeling of carbon nanotube interconnects and their performance estimation in VLSI design
机译:
碳纳米管互连的电路建模及其在VLSI设计中的性能估计
作者:
Arijit Raychowdhury
;
Roy K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
integrated circuit interconnections;
VLSI;
carbon nanotubes;
high-speed integrated circuits;
RLC circuits;
transmission lines;
integrated circuit modelling;
circuit modeling;
carbon nanotube interconnects;
performance estimation;
high current density;
comprehensive RLC transmission line model;
metallic CNTs;
high speed VLSI design;
54.
Scaling pFET hot-electron injection
机译:
缩放PFET热电子注入
作者:
Duffy C.
;
Hasler P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
hot carriers;
charge injection;
impact ionisation;
Boltzmann equation;
phonons;
conduction bands;
semiconductor device models;
pFET hot-electron injection scaling;
p-channel MOSFET;
hole-induced impact ionization;
empty conduction band;
electrons migration;
spatially-varying Boltzmann transport equation;
distribution function alteration;
optical phonon absorption;
optical phonon emission;
55.
Investigation of electrostatic discharge characteristics on low temperature polycrystalline silicon thin film transistors
机译:
低温多晶硅薄膜晶体管静电放电特性研究
作者:
Jam-Wem Lee
;
Yiming Li
;
Hsiao-Yi Lin
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
thin film transistors;
electrostatic discharge;
electromigration;
semiconductor device models;
elemental semiconductors;
silicon;
electrostatic discharge characteristics;
thin film transistors;
low temperature polycrystalline silicon;
ESD current;
single crystalline silicon films;
short circuit characteristic;
open circuit behavior;
polycrystalline transistors;
grain boundaries;
thermal conductivity;
electro-migration;
ESD protection circuits;
56.
A quantum many-body density matrix model for sub-femtosecond transport in mesoscopic structures
机译:
介术结构子飞秒传输量子多体密度矩阵模型
作者:
Knezevic I.
;
Ferry D.K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
resonant tunnelling;
many-body problems;
quasiparticles;
mesoscopic systems;
quantum many-body density matrix model;
sub-femtosecond transport;
mesoscopic structures;
transient transport;
resonant-tunneling diode;
quantum-mechanical information;
current-limiting active region;
Liouville equation;
partial trace free approach;
electron-electron interaction;
phonon scattering;
relaxation time approximation;
57.
Acoustic and optical phonons in nanotubes
机译:
纳米管中的声学和光学声音
作者:
Raichura A.
;
Stroscio M.A.
;
Dutta M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
nanotube devices;
ballistic transport;
phonons;
acoustic phonons;
optical phonons;
elastic continuum model;
single wall nanotubes;
multiple wall nanotube;
elastic cylindrical membrane;
finite thickness;
Donnell equations;
Rayleigh-Ritz method;
acoustic vibrational modes;
displacement modes;
deformation potential;
dispersion relations;
nanotube-based devices;
quasi-ballistic transport;
58.
Simulation of entanglement dynamics for a scattering between a free and a bound carrier in a quantum wire
机译:
Quantum Wire中的自由和边界载波之间散射动力学的刺痛
作者:
Bordone P.
;
Bertoni A.
;
Jacoboni C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
quantum entanglement;
semiconductor quantum wires;
Schrodinger equation;
harmonic oscillators;
electric potential;
wave functions;
electronic engineering computing;
entanglement dynamics simulation;
electron scattering;
free carrier;
bound carrier;
quantum wire;
numerical analysis;
quantum entanglement;
electron propagation;
charged particle;
harmonic potential;
ionized impurity;
localized phonon;
free electron;
screened Coulomb potential;
time-dependent Schrodinger equation;
two-particle wave function;
bipartite system;
minimum uncertainty wave packet;
ground state;
59.
Tracking the propagation of individual ions through ion channels with nano-MOSFETs
机译:
跟踪各个离子与纳米MOSFET的离子通道的传播
作者:
Millar C.
;
Asenov A.
;
Brown A.R.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
MOSFET;
electron transport theory;
nanoelectronics;
numerical analysis;
diffusion;
ion propagation;
ion channels;
nanoMOSFET;
drift-diffusion numerical simulations;
close proximity;
ion permeation;
semiconductor device simulation;
transport parameters;
electronic transport;
transistor;
ion transport;
60.
Computer simulation of magnetization for vertically coupled nanoscale quantum rings
机译:
垂直耦合纳米级量子环磁化计算机仿真
作者:
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum wells;
III-V semiconductors;
effective mass;
magnetisation;
indium compounds;
gallium arsenide;
nanoelectronics;
quasiparticles;
magnetization simulation;
energy spectra;
vertically coupled nanoscale semiconductor quantum rings;
magnetic field;
3D effective one-band Hamiltonian;
energy-dependent quasiparticle effective mass approximation;
position-dependent quasiparticle effective mass approximation;
Ben Daniel-Duke boundary conditions;
vertically coupled regions;
stacked layers;
jumping period;
jumping magnitude;
energy shell structure;
InAs-GaAs;
61.
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks
机译:
RTS在Decanano N-MOSFET中的振幅,具有常规和高k门堆叠
作者:
Lee A.
;
Brown A.R.
;
Asenov A.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device noise;
random noise;
CMOS integrated circuits;
nanoelectronics;
electron traps;
interface phenomena;
elemental semiconductors;
silicon compounds;
RTS amplitude;
decanano n-MOSFET;
high-k gate stacks;
low frequency noise;
random telegraph signals;
Si-SiO/sub 2/ interface;
semiconductor device noise;
nano-CMOS devices;
charge traps;
front gate dielectric surface;
back gate dielectric interface;
poly gate depletion;
Si-SiO/sub 2/;
62.
A microscopic quantum simulation of Si/SiO/sub 2/ interface roughness scattering in silicon nanowire transistors
机译:
硅纳米线晶体管中Si / SiO / Sub 2 /界面粗糙度散射的微观量子模拟
作者:
Jing Wang
;
Polizzi E.
;
Ghosh A.
;
Datta S.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
field effect transistors;
nanowires;
interface roughness;
electron-electron scattering;
quantum theory;
silicon compounds;
microscopic quantum simulation;
interface roughness scattering;
silicon nanowire transistors;
device structure;
integrated circuits;
carrier transport;
scattering mechanisms;
quantum-mechanical simulation;
surface roughness scattering;
Si-SiO/sub 2/;
63.
Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs
机译:
DGSOI MOSFET中电子速度过冲的Monte Carlo仿真
作者:
Gamiz F.
;
Godoy A.
;
Sampedro C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
silicon-on-insulator;
semiconductor device models;
Monte Carlo methods;
carrier mobility;
Poisson equation;
Schrodinger equation;
Monte Carlo simulation;
electron velocity overshoot;
DGSOI MOSFET;
metal oxide semiconductor field effect transistors;
current drive;
transconductance;
double gate MOSFET;
self-consistent Poisson-Schroedinger solver;
low field mobilities;
average conduction effective mass;
wavefunction overlapping;
inversion charges;
silicon layer thickness;
64.
Huckel I-V 3.0: a self-consistent model for molecular transport and its applications
机译:
Huckel I-V 3.0:一种用于分子运输及其应用的自我一致模型
作者:
Zahid F.
;
Paulsson M.
;
Polizzi E.
;
Ghosh A.W.
;
Siddiqui L.
;
Datta S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular electronics;
molecular electronic states;
organic compounds;
Huckel I-V 3.0;
self-consistent model;
molecular transport;
physical characteristics;
molecular conductors;
current-voltage characteristics;
break junction measurement;
symmetric molecule;
alkanethiol I-V characteristics;
nanopore experiment;
terminal calculations;
alkanethiol chains;
conjugated molecules;
molecular transistor;
transistor performance;
65.
Simulation of Schottky barrier diodes with a direct solver for the Boltzmann-Poisson system
机译:
肖特基屏障二极管用直接求解器的肖特基屏障二极管进行博德坦 - 泊松系统
作者:
Domaingo A.
;
Schurrer F.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
Schottky diodes;
Boltzmann equation;
Poisson equation;
S-parameters;
polynomial approximation;
semiconductor junctions;
semiconductor-metal boundaries;
integration;
electron transport theory;
device simulation;
Schottky barrier diode simulation;
Boltzmann-Poisson system;
electron transport;
Boltzmann transport equation;
Poisson equation;
spherically symmetric band models;
scattering mechanisms;
elastic first-order electron scattering;
acoustic phonons;
inelastic zeroth-order scattering;
optical phonons;
piecewise polynomial approximation;
distribution function;
high-order shock capturing algorithm;
metal-semiconductor junction modeling;
free carrier concentration;
direct integration;
continuity equation;
balance equation;
energy density;
direct Boltzmann-Poisson solver;
66.
Quantum potential approach to modeling nano-MOSFETs
机译:
纳米MOSFET建模的量子势方法
作者:
Ahmed S.S.
;
Ringhofer C.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
nanoelectronics;
semiconductor device models;
quantum gates;
perturbation theory;
molecular electronics;
Boltzmann equation;
quantum potential;
nanoMOSFET modeling;
parameter-free effective potential scheme;
particle-based simulations;
perturbation theory;
thermodynamic equilibrium;
electron energy;
electron wavevector;
Wigner equation;
Boltzmann equation;
steady states;
barrier corrections;
Hartree potential corrections;
transport modeling;
nanoscale MOSFET;
25 nm;
67.
Hilbert graph: an expandable interconnection for clusters
机译:
希尔伯特图:群集可扩展互连
作者:
Rodriguez Salazar F.
;
Barker J.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
workstation clusters;
telecommunication traffic;
telecommunication network topology;
graph theory;
communication complexity;
Hilbert graph;
expandable cluster interconnection;
commodity hardware;
high performance computers;
cluster computing;
multigrid methods;
parallel iterative solvers;
Hilbert curve;
extended mesh;
random communication patterns;
2D layout;
2D torus;
incremental expandability;
68.
A computational intelligent optical proximity correction for process distortion compensation of layout mask in subwavelength era
机译:
子波长时代布局掩模处理失真补偿的计算智能光学邻近校正
作者:
Shao-Ming Yu
;
Yiming Li
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
circuit layout;
circuit complexity;
masks;
submillimetre waves;
proximity effect (lithography);
genetic algorithms;
electronic engineering computing;
computational intelligent optical proximity correction;
process distortion compensation;
layout mask;
subwavelength era;
genetic algorithm;
rule-based technique;
conventional model-based correction method;
mask correction;
lithography simulator;
69.
Investigation of electrostatic discharge characteristics on low temperature polycrystalline silicon thin film transistors
机译:
低温多晶硅薄膜晶体管静电放电特性研究
作者:
Jam-Wem Lee
;
Yiming Li
;
Hsiao-Yi Lin
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
thin film transistors;
electrostatic discharge;
electromigration;
semiconductor device models;
elemental semiconductors;
silicon;
electrostatic discharge characteristics;
thin film transistors;
low temperature polycrystalline silicon;
ESD current;
single crystalline silicon films;
short circuit characteristic;
open circuit behavior;
polycrystalline transistors;
grain boundaries;
thermal conductivity;
electro-migration;
ESD protection circuits;
70.
Analysis of strained-Si device including quantum effect
机译:
分析包括量子效应的应变-SI装置
作者:
Tanabe R.
;
Yamasaki T.
;
Ashizawa Y.
;
Oka H.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
ballistic transport;
Monte Carlo methods;
silicon;
strained-Si device;
quantum effect;
technology scaling;
quantum transport;
band calculation program;
FUJITSU;
Monte Carlo simulator;
FALCON;
Bohm potential method;
strain effect decreases;
gate length;
ballistic particle;
71.
Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs
机译:
Quantum校正的全带蜂窝蒙特卡罗仿真Algan / GaN Hemts
作者:
Yamakawa S.
;
Goodnick S.M.
;
Aboud S.
;
Saraniti M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
high electron mobility transistors;
semiconductor device models;
electron-phonon interactions;
electron mobility;
phonon dispersion relations;
Monte Carlo methods;
III-V semiconductors;
aluminium compounds;
gallium compounds;
full-band cellular Monte Carlo simulation;
HEMT;
electron transport simulation;
quantum corrections;
full-band CMC transport model;
electron-phonon interactions;
wurtzite crystal structure;
rigid pseudo-ion model;
anisotropic deformation potentials;
electronic band structure;
atomic pseudopotential;
phonon dispersion;
polar-optical phonon;
dislocation scatterings;
AlGaN-GaN;
72.
Modeling of inelastic transport in one-dimensional metallic atomic wires
机译:
一维金属原子电线非弹性运输建模
作者:
Frederiksen T.
;
Brandbyge M.
;
Lorente N.
;
Jauho A.-P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
nanowires;
nanoelectronics;
molecular electronics;
quantum theory;
vibrational modes;
semiconductor quantum wires;
inelastic transport modeling;
1D metallic atomic wires;
atomic-size conductors;
nanoelectronics;
molecular electronics;
quantum effects;
macroscopic devices;
transport properties;
quantum mechanics;
electronic degrees of freedom;
mechanical degrees of freedom;
1D tight-binding model;
conducting electrons;
balls-and-springs model;
mechanical motion;
vibrational modes;
wire frequencies;
electronic Hamiltonian;
73.
The simulation of molecular and organic devices: a critical review and a look at future development
机译:
分子与有机器件的模拟:批判性综述和观察未来发展
作者:
Lugli P.
;
Csaba G.
;
Erlen C.
;
Harrer S.
;
Scarpa G.
;
Di Carlo A.
;
Pecchia A.
;
Latessa L.
;
Bolognesi A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
molecular electronics;
organic semiconductors;
circuit simulation;
molecular devices simulation;
organic devices simulation;
future developments;
device simulators;
organic field effect transistor;
74.
Subthreshold mobility extraction for SOI MESFETs
机译:
SOI MESFET的亚阈值迁移性提取
作者:
Khan T.
;
Vasileska D.
;
Thornton T.J.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
Schottky gate field effect transistors;
silicon-on-insulator;
semiconductor device models;
carrier mobility;
diffusion;
Monte Carlo methods;
subthreshold mobility extraction;
SOI MESFET;
diffusion coefficient;
2D Monte Carlo device simulator;
Einstein relation;
nondegenerate semiconductors;
low-field mobility values;
mobility calculation;
rf micropower circuit design;
mobility enhancement;
75.
Efficient simulation of the full Coulomb interaction in three dimensions
机译:
高效模拟三维完整库仑相互作用
作者:
Heitzinger C.
;
Ringhofer C.
;
Ahmed S.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
transport processes;
electron-electron interactions;
semiconductor device models;
MOSFET;
full Coulomb interaction simulation;
3D simulation;
nanodevice simulation;
3D fast multipole method;
semiconductor transport simulation;
electron-electron interactions;
electron-impurity interactions;
MC device simulation;
76.
Subthreshold mobility extraction for SOI MESFETs
机译:
SOI MESFET的亚阈值迁移性提取
作者:
Khan T.
;
Vasileska D.
;
Thornton T.J.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
Schottky gate field effect transistors;
silicon-on-insulator;
semiconductor device models;
carrier mobility;
diffusion;
Monte Carlo methods;
subthreshold mobility extraction;
SOI MESFET;
diffusion coefficient;
2D Monte Carlo device simulator;
Einstein relation;
nondegenerate semiconductors;
low-field mobility values;
mobility calculation;
rf micropower circuit design;
mobility enhancement;
77.
Electro-chemical modeling challenges of biological ion pumps
机译:
生物离子泵电化学建模挑战
作者:
Rakowski R.F.
;
Kaya S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
ion pumps;
electrochemical analysis;
molecular dynamics method;
Poisson equation;
channelling;
free energy;
biomembrane transport;
electrochemical modeling;
biological ion pumps;
ion movement;
biological membranes;
ion channels;
electrochemical gradients;
ion transporters;
permeation;
channel opening;
channel closing;
K/sup +/-selective channels;
atomic resolution structures;
bacterial K/sup +/ channel;
atomic structure;
transport modeling;
Poisson-Nernst-Planck electrodiffusion;
Brownian dynamic simulations;
protein structure;
channel gating;
molecular dynamic simulations;
intermediate conformations;
ion-motive ATPase;
free energy change;
ATP hydrolysis;
actively transported substance;
biological molecules;
Na/sup +/-K/sup +/ ATPase;
K;
Na;
78.
Phonon-limited transport in carbon nanotubes using the Monte Carlo method
机译:
使用Monte Carlo方法在碳纳米管中有限的传输
作者:
Pennington G.
;
Akturk A.
;
Goldsman N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
carbon nanotubes;
nanoelectronics;
Monte Carlo methods;
electron mobility;
electron-phonon interactions;
semiconductor device models;
phonon-limited transport;
Monte Carlo method;
nanoelectronics;
transport properties;
single-walled carbon nanotubes;
semiclassical transport simulations;
inelastic phonon scattering;
transport model;
momentum relaxation length;
electronic properties;
phonon properties;
phonon-limited mobility;
tube diameter;
surrounding fields;
electron energy;
phonon energy;
wavevector space;
single electron subband;
single phonon subbranch;
79.
Atomistic simulation of the electronic transport in organic nanostructures: electron-phonon and electron-electron interactions
机译:
有机纳米结构中电子传输的原子模拟:电子 - 声子和电子相互作用
作者:
Pecchia A.
;
Gagliardi A.
;
Di Carlo A.
;
Niehaus T.
;
Frauenheim T.
;
Lugli P.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
density functional theory;
Green's function methods;
organic semiconductors;
nanostructured materials;
electron-electron interactions;
electron-phonon interactions;
atomistic simulation;
electronic transport;
organic nanostructures;
electron-phonon interactions;
electron-electron interactions;
GW correction;
DFTB method;
molecular systems;
sandwiched in-between electrodes;
first-principle correction;
tunneling current;
80.
Acoustic and optical phonons in nanotubes
机译:
纳米管中的声学和光学声音
作者:
Raichura A.
;
Stroscio M.A.
;
Dutta M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
nanotube devices;
ballistic transport;
phonons;
acoustic phonons;
optical phonons;
elastic continuum model;
single wall nanotubes;
multiple wall nanotube;
elastic cylindrical membrane;
finite thickness;
Donnell equations;
Rayleigh-Ritz method;
acoustic vibrational modes;
displacement modes;
deformation potential;
dispersion relations;
nanotube-based devices;
quasi-ballistic transport;
81.
A non-parabolic six moments model for the simulation of sub-100 nm devices
机译:
用于仿真Sub-100 NM设备的非抛物线六个矩模型
作者:
Grasser T.
;
Kosik R.
;
Jungemann C.
;
Kosina H.
;
Meinerzhagen B.
;
Selberherr S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
carrier density;
Boltzmann equation;
Monte Carlo methods;
method of moments;
nonparabolic six moments model;
Boltzmann equation;
drift-diffusion model;
energy-transport model;
carrier concentration;
self-consistent analytic-band simulation;
self-consistent full-band simulation;
Monte Carlo simulation;
100 nm;
82.
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks
机译:
RTS在Decanano N-MOSFET中的振幅,具有常规和高k门堆叠
作者:
Lee A.
;
Brown A.R.
;
Asenov A.
;
Roy S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device noise;
random noise;
CMOS integrated circuits;
nanoelectronics;
electron traps;
interface phenomena;
elemental semiconductors;
silicon compounds;
RTS amplitude;
decanano n-MOSFET;
high-k gate stacks;
low frequency noise;
random telegraph signals;
Si-SiO/sub 2/ interface;
semiconductor device noise;
nano-CMOS devices;
charge traps;
front gate dielectric surface;
back gate dielectric interface;
poly gate depletion;
Si-SiO/sub 2/;
83.
Simulation of three-dimensional copper-low-k interconnections with different shapes
机译:
用不同形状模拟三维铜低k互连
作者:
Yiming Li
;
Jam-Wem Lee
;
Hong-Mu Chou
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
VLSI;
integrated circuit interconnections;
system-on-chip;
aluminium;
copper;
3D copper-low-k interconnections;
nanodevice;
very large scale integration;
system-on-a-chip;
device fabrication technology;
VLSI SoC design;
copper interconnects geometry;
resistance;
capacitance;
time constant;
RC time delay;
Cu;
Al;
84.
Quantum potential approach to modeling nano-MOSFETs
机译:
纳米MOSFET建模的量子势方法
作者:
Ahmed S.S.
;
Ringhofer C.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
nanoelectronics;
semiconductor device models;
quantum gates;
perturbation theory;
molecular electronics;
Boltzmann equation;
quantum potential;
nanoMOSFET modeling;
parameter-free effective potential scheme;
particle-based simulations;
perturbation theory;
thermodynamic equilibrium;
electron energy;
electron wavevector;
Wigner equation;
Boltzmann equation;
steady states;
barrier corrections;
Hartree potential corrections;
transport modeling;
nanoscale MOSFET;
25 nm;
85.
Hilbert graph: an expandable interconnection for clusters
机译:
希尔伯特图:群集可扩展互连
作者:
Rodriguez Salazar F.
;
Barker J.R.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
workstation clusters;
telecommunication traffic;
telecommunication network topology;
graph theory;
communication complexity;
Hilbert graph;
expandable cluster interconnection;
commodity hardware;
high performance computers;
cluster computing;
multigrid methods;
parallel iterative solvers;
Hilbert curve;
extended mesh;
random communication patterns;
2D layout;
2D torus;
incremental expandability;
86.
Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples
机译:
QDAME中的任意晶体取向与GE 7.5 NM DGFET示例
作者:
Laux S.E.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
MOSFET;
quantum interference devices;
Schrodinger equation;
germanium;
quantum device analysis;
modal evaluation;
device simulations;
crystallographic orientation;
real-space coordinate systems;
k-space coordinate systems;
NanoMOS;
Ge DGFET;
Schrodinger equation;
boundary conditions;
device geometry;
transport lumping;
7.5 nm;
Ge;
87.
The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation
机译:
蒙特卡罗设备仿真量子校正的有效传导边缘方法
作者:
Bo Wu
;
Ting-wei Tang
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
Monte Carlo methods;
conduction bands;
logic gates;
conduction-band edge method;
quantum correction;
Monte Carlo device simulation;
ultra-thin double gate MOSFET;
88.
Full quantum mechanical simulation of ultra-small silicon devices in three-dimensions: physics and issues
机译:
三维超小型硅装置的全量子力学模拟:物理与问题
作者:
Gilbert M.J.
;
Ferry D.K.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
finite element analysis;
nanoelectronics;
parallel algorithms;
linear systems;
Green's function methods;
MOSFET;
quantum wires;
semiconductor device models;
quantum mechanical simulation;
ultra-small silicon devices;
ballistic quantum transport model;
quantum wire silicon MOSFET;
recursive scattering matrix approach;
quantum simulation technique;
nonuniform mesh;
89.
Evolution of current transport models for engineering applications
机译:
工程应用流动模型的演变
作者:
Gehring A.
;
Selberherr S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
technology CAD (electronics);
Schrodinger equation;
Poisson equation;
Monte Carlo methods;
transport processes;
Wigner distribution;
transport model;
engineering applications;
device modeling tools;
quantum-mechanical modeling approach;
macroscopic device simulators;
Wigner equation;
density-gradient model;
self-consistently couple Schrodinger-Poisson solvers;
Wigner Monte Carlo method;
quantum correction;
90.
3d Monte Carlo simulation of FinFET using FMM algorithm
机译:
FMM算法的3D Monte Carlo仿真FinFET
作者:
Khan H.R.
;
Vasileska D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
field effect transistors;
Monte Carlo methods;
3D Monte Carlo simulation;
FinFET;
FMM algorithm;
double-gate MOSFET;
quantization effects;
Coulomb interaction;
91.
A microscopic quantum simulation of Si/SiO/sub 2/ interface roughness scattering in silicon nanowire transistors
机译:
硅纳米线晶体管中Si / SiO / Sub 2 /界面粗糙度散射的微观量子模拟
作者:
Jing Wang
;
Polizzi E.
;
Ghosh A.
;
Datta S.
;
Lundstrom M.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
elemental semiconductors;
field effect transistors;
nanowires;
interface roughness;
electron-electron scattering;
quantum theory;
silicon compounds;
microscopic quantum simulation;
interface roughness scattering;
silicon nanowire transistors;
device structure;
integrated circuits;
carrier transport;
scattering mechanisms;
quantum-mechanical simulation;
surface roughness scattering;
Si-SiO/sub 2/;
92.
Influence of ballistic effects in ultra-small MOSFETs
机译:
弹道效应对超小MOSFET的影响
作者:
Saint Martin J.
;
Aubry-Fortuna V.
;
Bournel A.
;
Dollfus P.
;
Galdin S.
;
Chassat C.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
semiconductor device models;
ballistic transport;
Monte Carlo methods;
ballistic effects;
ultra-small MOSFET;
ballistic transport;
double gate MOSFET;
semi-classical Monte Carlo simulation;
ballistic electrons;
25 nm;
10 nm;
Si;
93.
Three-dimensional quantum transport simulation of ultra-small FinFETs
机译:
超小型铜倍数的三维量子传输模拟
作者:
Takeda H.
;
Mori N.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
ballistic transport;
Green's function methods;
electron-phonon interactions;
3D quantum transport simulation;
ultra-small FinFET;
non-equilibrium Green's function;
electron-phonon interaction;
94.
A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors
机译:
准分子激光退火互补薄膜晶体管紧凑型型号参数提取的新方法
作者:
Yiming Li
;
Shao-Ming Yu
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
thin film transistors;
laser beam annealing;
excimer lasers;
circuit simulation;
semiconductor device models;
model parameter extraction;
excimer laser annealing;
complementary thin film transistors;
RPI model;
transconductance;
output conductance;
RPI TFT models;
circuit simulation;
95.
A physically-based analytic model for stress-induced hole mobility enhancement
机译:
一种物理基于基于的应力诱导空穴移动性的分析模型
作者:
Obradovic B.
;
Matagne P.
;
Shifren L.
;
Wang X.
;
Stettler M.
;
He J.
;
Giles M.D.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor device models;
hole mobility;
physically-based analytic model;
stress-induced hole mobility enhancement;
computationally efficient model;
stress-modulated hole mobility;
continuum transport simulators;
bandstructure modulation;
wafer bending experiments;
transverse stress;
96.
Electron exchange interaction in electronically confined Si quantum dots
机译:
电子局限性Si量子点中的电子交换相互作用
作者:
Seungwon Lee
;
von Allmen P.
;
Oyafuso F.
;
Klimeck G.
;
Boykin T.B.
;
Coppersmith S.N.
;
Friesen M.
;
Eriksson M.A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
semiconductor quantum dots;
exchange interactions (electron);
tight-binding calculations;
quantum well devices;
quantum computing;
elemental semiconductors;
silicon;
electron exchange interaction;
electronically confined Si quantum dots;
sp/sup 3/d/sup 5/s* empirical tight-binding model;
exchange energy;
P donors;
fast oscillatory behavior;
inter-donor distance;
Si:P based quantum computer architecture;
exponential decay;
inter-dot distance;
tensile biaxial strain;
Si quantum well;
Si band structure;
electron wave function;
Bloch oscillations;
Si;
97.
The NEGF method: capabilities and challenges
机译:
negf方法:能力和挑战
作者:
Datta S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
Green's function methods;
semiconductor device models;
quantum theory;
carrier mobility;
quantum wires;
NEGF method;
semiconductor nanowires;
carbon nanotubes;
molecular wires;
nanoscale quantum transport;
metallurgical contacts;
phonons;
contact-like entities;
98.
Hybrid-basis modeling of electron transport through molecules on silicon
机译:
电子传输通过硅分子的混合基础建模
作者:
Gengchiau Liang
;
Ghosh A.
;
Rakshit T.
;
Datta S.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
fullerenes;
electron transport theory;
molecular electronics;
molecular configurations;
elemental semiconductors;
ab initio calculations;
EHT calculations;
density functional theory;
Green's function methods;
scanning tunnelling spectroscopy;
silicon;
hybrid-basis modeling;
electron transport;
molecular electronics;
molecular devices;
nanoscale systems;
conducting properties;
nonequilibrium condition;
EHT parameters;
bulk silicon;
ab-initio basis set;
contact surface atoms;
surface Green function;
density-functional treatment;
scanning tunneling spectroscopy measurements;
conductance-voltage curves;
organic molecules;
negative-differential resistance;
molecular levels;
silicon band-edge;
C60 molecules;
99.
On the electrostatics of double-gate and cylindrical nanowire MOSFETs
机译:
在双闸和圆柱纳米线MOSFET的静电装置上
作者:
Gnani E.
;
Reggiani S.
;
Rudan M.
;
Baccarani G.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
MOSFET;
CMOS integrated circuits;
semiconductor device models;
nanowires;
nanoelectronics;
electrostatics;
Poisson equation;
Schrodinger equation;
mesh generation;
eigenvalues and eigenfunctions;
network topology;
electrostatics;
double-gate MOSFET;
cylindrical nanowire MOSFET;
MOSFET scaling;
ITRS provisions;
device architectures;
CMOS technology;
short-channel effect containment;
DIBL effect containment;
fully-depleted DG MOSFET;
CNW MOSFET;
channel length;
2D Poisson equation;
1D Schrodinger equations;
mesh points;
energy eigenfunctions;
unperturbed eigenfunctions;
25 nm;
100.
Vortex flows in semiconductor device quantum channels: time-dependent simulation
机译:
涡流流动在半导体器件量子通道中:时间依赖性仿真
作者:
Barker J.
;
Martinez A.
会议名称:
《International Workshop on Computational Electronics》
|
2004年
关键词:
vortices;
nanoelectronics;
MOSFET;
semiconductor device models;
transient response;
quantum interference phenomena;
surface roughness;
interface phenomena;
ballistic transport;
Green's function methods;
computational electromagnetics;
vortex flows;
semiconductor device quantum channels;
time-dependent simulation;
blocking quantum vortices;
open current flows;
current-voltage characteristics;
nanoscaled semiconductor devices;
time-independent quantum transport models;
angular momentum generation;
quantum interference;
atomistic impurity distributions;
surface roughness scattering;
vortex cores;
vortex formation;
time-dependent flows;
quasiballistic channels;
transient response;
current fields;
density fields;
stationary vortex;
fluctuation potential landscape;
rough interface;
charge trapping;
ultrasmall MOSFET devices;
Green function;
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