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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Coplanar millimeter-wave ICs for W-band applications using 0.15 /spl mu/m pseudomorphic MODFETs
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Coplanar millimeter-wave ICs for W-band applications using 0.15 /spl mu/m pseudomorphic MODFETs

机译:使用0.15 / spl mu / m拟态MODFET的W波段应用共面毫米波IC

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摘要

A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz. Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated. The MMICs have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively. A noise figure of 6.4 dB was measured at 110 GHz. The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz.
机译:用于级联MODFET的小信号S参数和噪声模型已通过验证,频率高达120 GHz,从而允许可预测的单片微波集成电路(MMIC)设计至W波段。共面波导技术在构建紧凑的高性能系统模块方面的潜力已通过无源和有源MMIC组件得到了证明。所实现的无源结构包括威尔金森合路器/分频器和电容性负载的超小型支线耦合器。对于这两个构件块,在高达120 GHz的频率下,测量数据和建模数据之间都具有很好的一致性。基于准确的设计数据库,设计并制造了两种版本的紧凑型集成放大器,它们利用共源共栅器件在90-120 GHz频率范围内应用。 MMIC在91 GHz和110 GHz时分别具有26.3 dB和20 dB的增益。在110 GHz处测得的噪声系数为6.4 dB。 90-100 GHz放大器与MMIC可调振荡器集成在一起,产生了一个W波段源,可在94至98 GHz范围内提供超过6 dBm的输出功率。

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