A parallel processing chip with embedded DRAM macros

摘要

A combined DRAM and logic chip has been developed for massively parallel processing (MPP) applications. A trench cell 4-Mb CMOS DRAM technology is used to fabricate the chip with an additional third-level metal layer. The 5-V 0.8-/spl mu/m technology merges 100-K gate custom logic circuits and 4.5-Mb DRAM onto a 14.7/spl times/14.7 mm/sup 2/ die. The DRAM design is based on a 32-K/spl times/9-b (288-Kb) self-consistent macro form. It has independent address inputs, data I/O ports, access control circuits, and redundancy fuses and elements. The logic part of the chip consists of eight 16-b CPUs and some broadcast logic circuits. Each CPU and two DRAM macros (64-KB) comprise a processing element (PE), and hypercube connections among eight PE's are made for the scalable MPP capability. Each chip delivers 50-MIPS of performance at 2.7 W.