Broad bandwidth amplifiers are typically limited in their spurious free dynamic range by second-order products. We have demonstrated more than 30 dB reduction in second-order products for amplifiers with 1-2 octaves of bandwidth utilizing a novel circuit approach. Improved planar baluns (180/spl deg/ transformers) are combined with differential amplifiers fabricated from 0.25-/spl mu/m GaAs pseudomorphic high electron mobility transistors to implement 4-16-GHz and 3-6-GHz small-signal amplifiers. Measured values of OIP2 exceed 60 dBm with a 1-dB compression level of approximately 5 dBm. These unprecedented levels enable miniaturized, low-power front ends for broad bandwidth microwave systems.
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机译:宽带放大器通常受二阶产品限制其无杂散动态范围。对于新颖的电路方法,我们已经展示了带宽为1-2个八度音阶的放大器的二阶产品降低了30 dB以上。改进的平面巴伦(180 / spl deg /变压器)与由0.25- / spl mu / m GaAs伪形高电子迁移率晶体管制成的差分放大器组合,以实现4-16 GHz和3-6 GHz小信号放大器。 OIP2的测量值超过60 dBm,压缩水平为1 dB,约为5 dBm。这些空前的水平使宽带微波系统的小型化,低功耗前端成为可能。
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