L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digitalcellular base stations

摘要

An L/S band high-power and low-distortion AlGaAs/GaAsnheterostructure field-effect-transistor amplifier has been developed.nThe amplifier employed two pairs of prematched GaAs chips mounted on ansingle package, and the total output power was combined in a push-pullnconfiguration with a low-loss microstrip balun circuit. The developednamplifier demonstrated state of-the-art performance of 140 W outputnpower with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibitednextremely low distortion performance, which is suitable for digitalncellular base station system applications