Breakdown in millimeter-wave power InP HEMTs: a comparison withGaAs PHEMT's

摘要

In spite of their outstanding transport characteristics, InPnhigh-electron mobility transistors (HEMTs) deliver lower output powernthan GaAs pseudomorphic HEMTs (PHEMTs) throughout most of thenmillimeter-wave regime. However, the superior power-added efficiency ofnInP HEMTs when compared with GaAs PHEMTs makes this technologynattractive for many applications. The reason for the relatively inferiornpower output of InP HEMTs lies in their comparatively small off-statenand on-state breakdown voltages. This paper reviews the state ofnknowledge regarding the physics of breakdown voltage in InP HEMTs,nplacing it in contrast with GaAs PHEMTs. It also presents currentnunderstanding regarding burnout, a closely related phenomenon. Thisnpaper concludes by discussing strategies for improving the breakdownnvoltage and the power output of InP HEMTs