Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamicrange implemented in SiGe HBT

摘要

A wide-bandwidth automatic gain control (AGC) amplifier IC wasndeveloped using a self-aligned selective-epitaxial SiGe heterojunctionnbipolar transistor (HBT). A transimpedance load circuit was used, andnits damping factor was optimized to achieve a wide bandwidth of 32.7nGHz. Capacitor peaking was introduced to the second variable-gainnamplifier in order to obtain a wide gain dynamic range of 19 dB. Thenamplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s