A universal dual band LNA implementation in SiGe technology forwireless applications

摘要

A dual band low-noise amplifier (LNA) with matched inputs andnoutputs, implemented in Infineon Technologies' B7HF SiGe process, isnpresented. Both the single-ended inputs and outputs are matched to 50nΩ without external elements. For the low-band (800 MHz-1 GHz), thenLNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900nMHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noisenfigure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with anpower supply voltage range from 2.7-3.6 V