A sub-1-dB NF±2.3-kV ESD-protected 900-MHz CMOS LNA

摘要

A sub-1-dB noise figure HBM ESD-protected [-3 kV, 2.3 kV] lownnoise amplifier (LNA) has been integrated in a 0.35-Μm RF CMOSnprocess with on-chip inductors. The sensitivity of the LNA performancesnto the spread of parasitics associated with package and bondwire hasnbeen attenuated by using an inductive on-chip source degeneration. Atn920 MHz and Pdc=8.6 mW, the LNA features: noise figure NF=1ndB, input return loss=-8.5 dB, output return loss=-27 dB, power gain Gnp=13 dB, input IIP3=-1.5 dBm. At a power dissipation of 5 mWnand 17.6 mW, a NF respectively equal to 1.2 dB and 0.85 dB is measured.nThe CMOS LNA takes 12 pins of a TQFP48 package, an area ofn1.0×0.66 mm2 (bondwire pads excluded) and it is thenfirst HBM ESD-protected [-3 kV, 2.3 kV] CMOS LNA to break the 1-dB NFnbarrier