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Design methodology of embedded DRAM with virtual-socketarchitecture

机译:具有虚拟插槽架构的嵌入式DRAM设计方法

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This paper proposes the virtual-socket architecture in order tonreduce the design turn-around time (TAT) of the embedded DRAM. Thenrequired memory density and the function of the embedded DRAM are systemndependent. In the conventional design, the DRAM control circuitry withnthe DRAM memory array is handled as a hardware macro, resulting in thenincrease in design TAT. On the other hand, our proposed architecturenprovides the DRAM control circuitry as a software macro to takenadvantage of the automated tools based on synchronous circuit design.nWith array-generator technology, this architecture can achieve highnquality and quick turn-around time (QTAT) of flexible embedded DRAM thatnis almost the same as the CMOS ASIC. We applied this virtual-socketnarchitecture to the development of the 61-Mb synchronous DRAM core usingn0.18-Μm design rule and confirmed the high-speed operation, 166 MHznat CAS latency of two, and 180 MHz at that of three. The experimentalnresults show that our proposed architecture can be applied to thendevelopment of the high-performance embedded DRAM with design QTAT
机译:本文提出了虚拟插槽架构,以减少嵌入式DRAM的设计周转时间(TAT)。然后,所需的存储密度和嵌入式DRAM的功能与系统有关。在常规设计中,与DRAM存储器阵列一起的DRAM控制电路被作为硬件宏来处理,从而导致设计TAT的增加。另一方面,我们提出的架构将DRAM控制电路作为软件宏来提供,以利用基于同步电路设计的自动化工具。n借助阵列发生器技术,该架构可以实现灵活的高质量和快速周转时间(QTAT)嵌入式DRAM与CMOS ASIC几乎相同。我们使用n0.18-μm设计规则将这种虚拟套接字架构应用于61-Mb同步DRAM内核的开发,并确认了高速运行,两个为166 MHznat CAS延迟和三个为180 MHz。实验结果表明,我们提出的体系结构可以应用于设计QTAT的高性能嵌入式DRAM的开发。

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