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首页> 外文期刊>IEEE Journal of Solid-State Circuits >G{sub}m-Boosted Common-Gate LNA and Differential Colpitts VCO/QVCO in 0.18-μm CMOS
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G{sub}m-Boosted Common-Gate LNA and Differential Colpitts VCO/QVCO in 0.18-μm CMOS

机译:采用0.18μmCMOS的G {sub} m增强共栅LNA和差分Colpitts VCO / QVCO

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摘要

The demand for radio frequency (RF) integrated circuits with reduced power consumption is growing owing to the trend toward system-on-a-chip (SoC) implementations in deep-sub-micron CMOS technologies. The concomitant need for high performance imposes additional challenges for circuit designers. In this paper, a g{sub}m -boosted common-gate low-noise amplifier (CGLNA), differential Colpitts voltage-controlled oscillators (VCO), and a quadrature Colpitts voltage-controlled oscillator (QVCO) are presented as alternatives to the conventional common-source LNA and crossrcoupled VCO/QVCO topologies. Specifically, a g{sub}m -boosted common-gate LNA loosens the link between noise factor (i.e., noise match) and input matching (i.e., power match); consequently, both noise factor and bias current are simultaneously reduced. A transformer-coupled CGLNA is described. Suggested by the functional and topological similarities between amplifiers and oscillators, differential Colpitts VCO and QVCO circuits are presented that relax the start-up requirements and improve both close-in and far-out phase noise compared to conventional Colpitts configurations. Experimental results from a 0.18-μm CMOS process validate the g{sub}m -boosting design principle.
机译:由于在深亚微米CMOS技术中采用片上系统(SoC)实现的趋势,对具有降低功耗的射频(RF)集成电路的需求正在增长。随之而来的高性能需求给电路设计人员带来了额外的挑战。在本文中,提出了一种ag {sub} m增强型共栅低噪声放大器(CGLNA),差分Colpitts压控振荡器(VCO)和正交Colpitts压控振荡器(QVCO)的替代方案。共源LNA和交叉耦合的VCO / QVCO拓扑。具体地,由g {sub} m增强的共栅LNA松开了噪声因数(即,噪声匹配)与输入匹配(即,功率匹配)之间的联系;因此,噪声因子和偏置电流均同时降低。描述了变压器耦合的CGLNA。放大器和振荡器之间的功能和拓扑相似性表明,与传统的Colpitts配置相比,提出了差分Colpitts VCO和QVCO电路,它们放宽了启动要求,并改善了近相和远相相位噪声。 0.18μmCMOS工艺的实验结果验证了g {sub} m增强设计原理。

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