A CMOS Smart Temperature Sensor With a 3σ Inaccuracy of ±0.1℃ From -55℃ to 125℃

摘要

A smart temperature sensor in 0.7 μm CMOS is accurate to within ±0.1℃ (3σ) over the full military temperature range of -55℃ to 125℃. The sensor uses substrate PNP transistors to measure temperature. Errors resulting from nonidealities in the readout circuitry are reduced to the 0.01℃ level. This is achieved by using dynamic element matching, a chopped current-gain independent PTAT bias circuit, and a low-offset second-order sigma-delta ADC that combines chopping and correlated double sampling. Spread of the base-emitter voltage characteristics of the substrate PNP transistors is compensated by trimming, based on a calibration at one temperature. A high trimming resolution is obtained by using a sigma-delta current DAC to fine-tune the bias current of the bipolar transistors.