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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Noise Reduction and Linearity Improvement Technique for a Differential Cascode LNA
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A Noise Reduction and Linearity Improvement Technique for a Differential Cascode LNA

机译:差分级联LNA的降噪和线性改善技术

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摘要

A typical common source cascode low-noise amplifier (CS-LNA) can be treated as a CS-CG two stage amplifier. In the published literature, an inductor is added at the drain of the main transistor to reduce the noise contribution of the cascode transistors. In this work, an inductor connected at the gate of the cascode transistor and capacitive cross-coupling are strategically combined to reduce the noise and the nonlinearity influences of the cascode transistors in a differential cascode CS-LNA. It uses a smaller noise reduction inductor compared with the conventional inductor based technique. It can reduce the noise, improve the linearity and also increase the voltage gain of the LNA. The proposed technique is theoretically formulated. Furthermore, as a proof of concept, a 2.2 GHz inductively degenerated CS-LNA was fabricated using TSMC 0.35 $mu$m CMOS technology. The resulting LNA achieves 1.92 dB noise figure, 8.4 dB power gain, better than 13 dB S11, more than 30 dB isolation (S12), and ${-}$ 2.55 dBm IIP3, with the core fully differential LNA consuming 9 mA from a 1.8 V power supply.
机译:典型的共源共源共源共栅低噪声放大器(CS-LNA)可以视为CS-CG两级放大器。在已公开的文献中,在主晶体管的漏极处增加了一个电感器,以减少共源共栅晶体管的噪声影响。在这项工作中,策略性地将连接在共源共栅晶体管的栅极处的电感器和电容性交叉耦合组合在一起,以减少差分共源共栅CS-LNA中共源共栅晶体管的噪声和非线性影响。与传统的基于电感器的技术相比,它使用更小的降噪电感器。它可以降低噪声,改善线性度并增加LNA的电压增益。从理论上阐述了提出的技术。此外,作为概念验证,使用TSMC 0.35μmCMOS技术制造了2.2 GHz感应退化的CS-LNA。最终的LNA达到1.92 dB的噪声系数,8.4 dB的功率增益,优于13 dB的S11,超过30 dB的隔离度(S12)和2.55 dBm的IIP3,而核心全差分LNA消耗的电流为9 mA。 1.8 V电源。

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