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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 20-Gb/s Burst-Mode Clock and Data Recovery Circuit Using Injection-Locking Technique
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A 20-Gb/s Burst-Mode Clock and Data Recovery Circuit Using Injection-Locking Technique

机译:采用注入锁定技术的20 Gb / s突发模式时钟和数据恢复电路

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摘要

A 20-Gb/s clock and data recovery circuit incorporates injection-locking technique to achieve high-speed operation with low power dissipation. The circuit creates spectral line at the frequency of data rate and injection-locks two cascaded LC oscillators. A frequency-monitoring mechanism is employed to ensure a close matching between the VCO natural frequency and data rate. Fabricated in 90-nm CMOS technology, this circuit achieves a bit error rate of less than $10^{-9}$ in both continuous (PRBS of $2^{31}-1$) and burst modes while consuming 175 mW from a 1.5-V supply.
机译:20 Gb / s时钟和数据恢复电路采用注入锁定技术,以实现低功耗的高速运行。该电路以数据速率的频率创建频谱线,并注入锁定两个级联的LC振荡器。采用频率监视机制以确保VCO固有频率与数据速率之间的紧密匹配。该电路采用90 nm CMOS技术制造,在连续模式(PRBS为$ 2 ^ {31} -1 $)和突发模式下均实现低于$ 10 ^ {-9} $的误码率,而1.5的功耗为175mW -V电源。

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