Measurement of silicon and GaAs/Ge solar cells ac parameters

摘要

The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell Ⅰ-Ⅴ characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature.