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P3HT:PCBM and Cu_2SnSe_3 nano-ink based hybrid solar cells

机译:P3HT:PCBM和基于Cu_2SnSe_3纳米墨水的混合太阳能电池

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摘要

In this work, we report the synthesis of Copper Tin Selenide (Cu2SnSe3) nanocrystals by solvothermal method. We have fabricated for the first time, the heterojunction hybrid solar cells using blend of poly(3-hexyle thiophene) (P3HT):[6, 6]phenyl-C61-butyric-acid-methyl-ester (PCBM) and Cu2SnSe3 (CTSe) nano-ink as an additional photoactive layer. Electrochemical impedance spectroscopy (EIS) of fabricated devices are carried out under dark condition on applied bias of 0.1 V with frequency ranging from 1 Hz to 1 MHz. It was found that the charge storage capacity of the device based on CTSe nano-ink/P3HT:PCBM as an photo absorber, was greater than the device without P3HT:PCBM layer. We have obtained open circuit voltage (V-oc) of 565 mV, current density (J(sc)) of 0.87 mA/cm(2) and fill factor (FF) of 0.48 from the hybrid solar cells. This method is novel and cost effective for preparing stable nano-ink, which can be used in printable optoelectronics devices for large area production.
机译:在这项工作中,我们报告了溶剂热法合成硒化铜锡(Cu2SnSe3)纳米晶体。我们首次使用聚(3-己基噻吩)(P3HT):[6,6]苯基-C61-丁酸-甲基酯(PCBM)和Cu2SnSe3(CTSe)的混合物制造了异质结混合太阳能电池)纳米墨水作为附加的光敏层。制成的器件的电化学阻抗谱(EIS)在黑暗条件下,施加的0.1 V偏压,频率范围为1 Hz至1 MHz的情况下进行。发现基于CTSe纳米墨水/ P3HT:PCBM作为光吸收剂的器件的电荷存储容量大于没有P3HT:PCBM层的器件的电荷存储容量。我们从混合太阳能电池获得了565 mV的开路电压(V-oc),0.87 mA / cm(2)的电流密度(J(sc))和0.48的填充系数(FF)。该方法是新颖的且具有成本效益的,用于制备稳定的纳米墨水,可用于大面积生产的可印刷光电设备中。

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