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Discharge characteristics of long SF6 gas gap with and without insulator in GIS under VFTO and LI

机译:在VFTO和LI下GIS中带或不带绝缘子的SF6长气隙放电特性

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摘要

Gas insulator switchgears (GISs), widely used in electric power systems for decades, have many advantages due to their compactness, minimal environmental impact, and long maintenance cycles. However, very fast transient overvoltage (VFTO) increases caused by a rise in voltage levels can lead to GIS insulation failures. In this paper, a generating system of VFTO and standard lightning impulse (LI) is established. The insulation characteristics of SF6 gas with and without insulators under VFTO and standard LI are investigated. Experimental results show that the 50% breakdown voltages of the inhomogeneous electric field rod-plane gap under positive VFTO and standard LI are higher than that under negative VFTO and standard LI. The research shows that the 50% breakdown voltage under VFTO could be lower than that under standard LI at 0.5 MPa for the negative polarity. Moreover, the polarity effect of the insulator without defect is different from that with defect. Similarly, the breakdown voltage of the defective insulator under VFTO could be lower than that under standard LI by 8%. The flashover channel under VFTO is seen as more than that under standard LI. Based on the analysis of discharge images and experimental results, it is concluded that the polarity effect is related to the distortion effect of ion clusters formed by SF6 on the electric field. Additionally, the steepness and front time of impulse plays an important role in the initiation and further development of discharge on insulator surface. Finally, the research shows that different discharge characteristics between VFTO and standard LI may be caused by different wave fronts and oscillation on the tails of the impulses.
机译:数十年来,气体绝缘开关设备(GISs)广泛用于电力系统,由于其紧凑,对环境的影响最小以及维护周期长,因此具有许多优势。但是,由于电压电平升高而导致的非常快速的瞬态过电压(VFTO)升高会导致GIS绝缘故障。本文建立了VFTO和标准雷电脉冲(LI)的产生系统。研究了在VFTO和标准LI下带或不带绝缘子的SF6气体的绝缘特性。实验结果表明,在正VFTO和标准LI下,非均匀电场杆平面间隙的50%击穿电压高于在负VFTO和标准LI下的电场。研究表明,对于负极性,VFTO下的50%击穿电压可能低于标准LI下的0.5 MPa击穿电压。而且,无缺陷的绝缘体的极性效应与有缺陷的绝缘体的极性效应不同。同样,VFTO下有缺陷绝缘子的击穿电压可能比标准LI下低8%。 VFTO下的闪络通道被视为比标准LI下的闪络通道更多。通过对放电图像的分析和实验结果,可以得出结论,极性效应与SF6形成的离子簇对电场的畸变效应有关。另外,脉冲的陡度和前置时间在绝缘子表面放电的引发和进一步发展中起着重要作用。最后,研究表明,VFTO和标准LI之间的放电特性不同可能是由脉冲的波前和尾部的振荡引起的。

著录项

  • 来源
    《Power and Energy Systems, CSEE Journal of》 |2015年第3期|16-22|共7页
  • 作者单位

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China;

    China Electr. Power Res. Inst., Beijing, China;

    China Electr. Power Res. Inst., Beijing, China;

    State Grid Corp. of China, Beijing, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    overvoltage; electric breakdown; gas insulated switchgear; lightning;

    机译:过电压;电击穿;气体绝缘开关柜;雷电;

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